Lg Innotek Co., Ltd.

Kyung Wook Park

Young Kyu Jeong

Jung Hyeok Bae

Duk Hyun Park

Myung Hoon Jung

June O Song

Kwang Ki Choi

Sung Ho Choo

Hyun Ju Kim

Chung Song Kim

Byung Hak Jeong

Woong Sun Yum

Ji Hyun Koo

Da Jeong Song

A light-emitting device discloses a light emitting structure layer including an active layer between first and second conductive semiconductor layers, a first electrode electrically connected to the first conductive semiconductor layer, a contact layer disposed under the second conductive semiconductor layer, a reflective layer disposed under the contact layer, a capping layer disposed under the reflective layer, and a conductive supporting member disposed under the capping layer. The reflective layer comprises a thickness that is greater than the thickness of the second conductive semiconductor layer and 90 or more times greater than the thickness of the contact layer.

Light emitting device and lighting apparatus having same

Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.

Light emitting device

Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member.

Light emitting device, light emitting device package, and lighting system

Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.

Light emitting device, method for fabricating the light emitting device, and light emitting device package

Disclosed are a method of fabricating a light emitting device includes the steps of: forming a plurality of compound semiconductor layers on a substrate, the substrate including a plurality of chip regions and isolation region; selectively etching the compound semiconductor layers to form a light emitting structure on each chip region and form a buffer structure on the isolation region; forming a conductive support member on the light emitting structure and the buffer structure; removing the substrate by using a laser lift off process; and dividing the conductive support member into the a plurality of chips of the chip regions, wherein the buffer structure is spaced apart from the light emitting structure.

Light emitting device and method thereof

Light emitting device and light emitting device package

Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first chip structure including a first reflective layer and a first light emitting structure having a plurality of compound semiconductor layers on the first reflective layer; a second chip structure bonded onto the first chip structure and including a second reflective layer and a second light emitting structure having a plurality of compound semiconductor layers on the second reflective layer; and an electrode on the second chip structure.

Device having a plurality of light emitting structures bonded by adhesive layers and light emitting device package having the same

Disclosed is a light emitting device. The light emitting device includes a body, a plurality of electrodes in the body, a light emitting chip installed in the body and electrically connected to the electrodes to generate light, and a thermo electric cooler module electrically connected to the electrodes and formed at a lower portion of the light emitting chip to cool the light emitting chip.

A light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a first electrode on the first conductive semiconductor layer; a transparent electrode layer on the second conductive semiconductor layer; and a second electrode on the transparent electrode layer, where the second electrode is anchored to the transparent electrode.

Light emitting device, method of manufacturing the same, light emitting device package, and illumination system

Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a conductive support substrate, a protection layer on the conductive support substrate, the protection layer having an inclined top surface, a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the conductive support substrate and the protection layer, and an electrode on the light emitting structure layer. A portion of the protection layer is disposed between the conductive support substrate and the light emitting structure layer.

Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit

A light emitting device according to the embodiment includes a conductive support member having a step portion at an outer peripheral region thereof, a protective member for filling the step portion formed at the outer peripheral region of the conductive support member, a reflective layer over the conductive support member, and a light emitting structure over the reflective layer and the protective member.

Light emitting device, method of manufacturing the same, and light emitting device package

Provided are a light emitting device and a light emitting device package having the same. The light emitting device includes a first light emitting structure layer including a plurality of semiconductor layers, a first electrode on the first light emitting structure layer, a first insulation layer under the first light emitting structure layer, a second light emitting structure layer including a plurality of semiconductor layers under a first reflective layer, a second reflective layer under the second light emitting structure layer, a bonding layer between the second light emitting structure layer and the first reflective layer, and a plurality of connection members connecting the first light emitting structure layer to the second light emitting structure layer in parallel.

Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting system

Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a rare-earth element is doped on a substrate, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, which are successively stacked on the buffer layer, forming a first electrode layer on the light emitting structure, removing the substrate, and forming a second electrode layer under the light emitting structure.

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Seoul, South Korea

Kyung Wook Park