Samsung Electronics Co., Ltd.

Kyung-wook Hwang

Nam-goo Cha

Dong-Hoon Lee

Yong-il Kim

Geon-Wook Yoo

Ha-nul Yoo

Wan-tae Lim

Hye-seok Noh

Sung-hyun Sim

Cheol-soo Sone

Jin-sub Lee

Nam-Goo Cha

Jung-sub Kim

Hun-jae Chung

Min-gyeong Gwon

Dong-gun Lee

Ju-Bin Seo

Jong-sup Song

Ji-hye Yeon

Han-Kyu Seong

Won-soo Ji

Geon-wook Yoo

Dong-myung Shin

Sae-sil Kim

Eun-joo Shin

Yu-ri Jung

Sung-mok Hong

Jae-hyeok Heo

Seong-eun Park

A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.

Light-emitting diode (LED), LED package and apparatus including the same

Provided is a light-emitting device including: a substrate; a light-emitting structure formed on the substrate; a first transmissive conductive layer on the light-emitting structure; a first dielectric pattern layer formed on the first transmissive conductive layer, the first dielectric pattern layer including a plurality of openings; a second transmissive conductive layer conformally formed on the first transmissive conductive layer exposed through the plurality of openings and on the first dielectric pattern layer; a second dielectric pattern layer filling the plurality of openings; and a reflective electrode layer formed on the second transmissive conductive layer and the second dielectric pattern layer.

Light-emitting device, package including the same, and method of manufacturing the same

A light-emitting device includes a light-emitting structure, a lens, and a reflective layer. The light-emitting structure includes a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode layer electrically connected to the first-conductivity-type semiconductor layer, and a second electrode layer electrically connected to the second-conductivity-type semiconductor layer. The lens is located on the light-emitting structure. The reflective layer is located on the lens.

Light-emitting device including chip-scale lens

A light-emitting device package includes a supporting substrate, a light-emitting device on the supporting substrate, an adhesive layer on at least a portion of a side surface or lower surface of the light-emitting device, the adhesive layer connecting the light-emitting device to the supporting substrate, and an air layer in a space defined by the supporting substrate, the light-emitting device, and the adhesive layer.

Light-emitting device package

A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.

Light-emitting device packages and methods of manufacturing the same

A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.

Three-dimensional light-emitting device and fabrication method thereof

A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.

Semiconductor light-emitting device

A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.

Nitride-based semiconductor light-emitting device

A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.

Light-emitting device having dielectric reflector and method of manufacturing the same

The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.

Light-emitting device and method of manufacturing the same

A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.

Growing community of inventors

Hwaseong-si, South Korea

Kyung-wook Hwang