Samsung Electronics Co., Ltd.

Seoul National University

Kyung Wook Hwang

Han Kyu Seong

Nam Goo Cha

Joong Kon Son

Geon Wook Yoo

Sung Hyun Sim

Jung Sub Kim

Yong Min Kim

Dong Hyun Lee

Wan Tae Lim

Jin Sub Lee

Sam Mook Kang

Jae Hyeok Heo

Eui Joon Yoon

Jung Sung Kim

Jin Wook Chung

Tae Woong Kim

Heon Su Jeon

Eun Joo Shin

In Su Shin

Gun Do Lee

Jeong Hwan Jang

Si Han Kim

A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.

Semiconductor light-emitting device

An LED device includes a transparent substrate having a bar-like shape and having a first surface and a second surface opposed thereto, a plurality of LED chips mounted on the first surface of the transparent substrate and electrically connected to each other, each of the plurality of LED chips having a reflective layer disposed on a surface mounted in the transparent substrate, a first connection terminal and a second connection terminal disposed on opposing ends of the transparent substrate and electrically connected to the plurality of LED chips, a bonding layer interposed between the plurality of LED chips and the transparent substrate and including a metal filler, and a wavelength conversion portion covering the first surface and the second surface of the transparent substrate and the plurality of LED chips.

LED device and LED lamp including the same

A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.

A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlInGaN (0&#x2264;x+y&#x2264;1, 0&#x2264;y&#x3c;0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5&#x2264;n(&#x3bb;)&#xd7;D/&#x3bb;&#x2264;5.0, where &#x3bb; represents a wavelength of light generated by the active layer, n(&#x3bb;) represents a refractive index of the plurality of nanorods at a wavelength of &#x3bb;, and D represents diameters of the plurality of nanorods.

Semiconductor ultraviolet light emitting device having improved light extraction efficiency

A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

Semiconductor light emitting device and manufacturing method of the same

A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.

Nanostructure semiconductor light emitting device

A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.

Semiconductor light emitting device

There is provided a nanostructure semiconductor light emitting device may including: a base layer formed of a first conductivity-type semiconductor, an insulating layer formed on an upper surface of the base layer and including a first region having a plurality of openings and a plurality of second regions positioned in the plurality of openings and spaced apart from the first region, dielectric nanocores disposed in the plurality of second regions, and a plurality of light emitting nanostructures each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the dielectric nanocores.

A nanostructure semiconductor light-emitting device includes a base layer formed of a first conductivity-type semiconductor, a first material layer disposed on the base layer and including a plurality of openings, a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore, a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer, a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures, and a contact electrode layer disposed on the second conductivity-type semiconductor extension layer.

Nanostructure semiconductor light-emitting device

A nanostructure semiconductor light emitting device includes a plurality of light emitting nanostructures, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore, a contact electrode disposed on a surface of the second conductivity-type semiconductor layer and formed of a transparent conductive material, a first light transmissive portion filling space between the plurality of light emitting nanostructures and formed of a material having a first refractive index, and a second light transmissive portion disposed on an upper surface of the first light transmissive portion to cover the plurality of light emitting nanostructures and formed of a material having a second refractive index higher than the first refractive index.

There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.

Semiconductor light emitting device and method of manufacturing the same

A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.

There is provided a light emitting device including a plurality of nanoscale light emitting structures spaced apart from one another on a first conductivity-type semiconductor base layer, the plurality of nanoscale light emitting structures each including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and an electrode connected to the second conductivity-type semiconductor layer. The electrode is disposed between a first nanoscale light emitting structure and a second nanoscale light emitting structure among the plurality of nanoscale light emitting structures, and the electrode has a height lower than a height of the plurality of nanoscale light emitting structures.

Growing community of inventors

Hwaseong-si, South Korea

Kyung Wook Hwang