Samsung Electronics Co., Ltd.

Kyung-woo Kang

Sang-Joon Hwang

Chi-wook Kim

Soo-In Cho

Jong-hyoung Lim

Sang-Gil Shin

Jong-ryeul Kim

Pil-Soon Park

Integrated circuit memory devices include a first memory block. The first memory block includes first and second memory array banks and a first peripheral circuit. The first peripheral circuit is disposed between the first and second memory array banks such that a length of a first data path from the first memory array bank to the first peripheral circuit is about equal to a length of a second data path from the second memory array bank to the first peripheral circuit.

Layout structures of data input/output pads and peripheral circuits of integrated circuit memory devices

A semiconductor memory device includes a data controller for generating a data signal in response to data generated at an internal circuit of the semiconductor memory device when a latency signal, which sets the latency of the semiconductor memory device, is activated. The device includes an output driver for generating a data strobe signal in response to the data signal, a preamble controller for outputting a preamble control signal in response to a read command input to the semiconductor memory device, and a preamble unit for preambling the data strobe signal by changing an output signal of the output driver from a logic high level to a logic low level, when the preamble control signal is activated. Data output from the semiconductor memory device has a satisfactory preamble section.

Semiconductor memory device having preamble function

A data buffer circuit includes first and second driver circuits coupled to the data latch circuit and operative to respectively pull up and pull down their outputs towards respective first and second voltages responsive to first and second data signals. An output circuit includes first and second transistors connected at an output node and operative to respectively pull up and pull down the output node toward respective ones of the first and second voltages responsive to respective ones of the outputs of the first and second driver circuits. A transition compensation circuit is operative to control relative rates at the output node of the output circuit transitions toward the first and second voltages responsive to a transition rate control signal.

Variable voltage data buffers

A semiconductor memory device such as a DRAM maintains uniform sensing efficiency of a data line sense amplifier The memory device includes multiple memory blocks, and each memory block containing bit line sense amplifies, load transistors, and switching transistors. The load transistors generate a current on the data lines when the respective memory block is selected for a read operation. The switching transistors connect the respective bit line sense amplifiers to data line pairs. The sizes of the load and switching transistors can adjust for different distances along data lines between the respective bit line sense amplifiers and data line sense amplifiers. Accordingly, the data line sense amplifiers have uniform sensing efficiency regardless of the transmission distance.

Semiconductor memory device capable of keeping sensing efficiency of data line sense amplifier uniform

Data masking is performed for an integrated circuit memory device, by generating a pulse in response to a data masking signal that is received on one of a plurality of data masking pins, equalizing a plurality of groups of input/output line pairs during the pulse and precharging the plurality of groups of input/output line pairs during the pulse. The group of input/output line pairs that correspond to the data masking signal then is precharged after the pulse in response to the data masking signal that is received on the one of the plurality of data masking pins. The input and output line drivers also preferably are deactivated during the pulse and the input and output line drivers, except for the group of input and output line drivers that correspond to the one of the plurality of data masking pins, preferably are activated after the pulse. Accordingly, the input and output line pairs that correspond to data input and output pins to be masked may be precharged during the pulse, and they may be continuously precharged after the pulse. Thus, even though the input and output line pairs may have a large resistance, they can be sufficiently precharged upon masking of write data.

Data masking systems and methods for integrated circuit memory devices

A data output buffer control circuit for a semiconductor memory device assures a column address setup time and a valid data setup time in EDO mode by eliminating short glitches in the data output buffer. The circuit assures the column address setup time by disabling the data output buffer for a predetermined period of time after an address transition, regardless of the state of a column address strobe signal. The circuit assures the setup time for valid data by sensing when the address is set up relative to when the column address strobe signal is activated, and then enabling the data output buffer so as to maintain invalid data in the data output buffer long enough to prevent a short glitch in the data output buffer if the column address is set up before the column address strobe signal is activated. The circuit includes a pulse generator for generating a pulse signal each time it senses a column address transition, and a latch circuit for combining the pulse signal with the column address strobe signal so as to generate a buffer control signal for enabling and disabling the data output buffer.

Data output buffer control circuit for a semiconductor memory device

A semiconductor device can be configured for compatibility with different system level interfaces, e.g., LVTTL or SSTL, after assembly, thereby eliminating the need for bonding options and reducing the cost of manufacturing the device. The device includes an interface dependent circuit that operates with a selected interface in response to one or more interface enable signals. Several alternative embodiments include interface control circuits and mode register circuits for generating the interface enable signals responsive to a row address and control signals such as RAS, CAS, WE, and CS. Some embodiments also include a switching network that allows an input buffer to use an internally generated reference voltage for one interface and an externally applied reference voltage for a second interface.

Method and apparatus for configuring a semiconductor device for

An input buffer that can operate with Low Voltage Transistor-Transistor Logic (LVTTL) and with Stub Series Terminated transceiver Logic (SSTL) includes a differential amplifier that differentially amplifies a reference voltage and an external input signal. A switching system is coupled to the differential amplifier, to supply an external power supply voltage to the differential amplifier under SSTL operating conditions and to supply an internal power supply voltage to the differential amplifier under LVTTL operating conditions. An internal power supply voltage generator is responsive to the external power supply voltage, to generate the internal power supply voltage therefrom. The internal power supply voltage generator supplies the internal power supply voltage to the switching system. The switching system preferably includes a first switch that supplies the external power supply voltage to the differential amplifier in response to an SSTL control signal. A second switch supplies the internal power supply voltage to the differential amplifier in response to an LVTTL control signal.

Input buffers and controlling methods for integrated circuit memory

A memory device having normal and extended data out (EDO). modes includes an array of memory cells arranged in plurality of rows and columns, first and second data latches which store data, a column address input which receives a column address signal, and a column address strobe input which receives a column address strobe signal. First latch control means, responsive to said column address input and to the column address strobe input, electrically couples one memory cell in the array of memory cells and the first data latch when a column address signal is asserted at the column address input and electrically decouples the one memory cell and the first data latch when a column address strobe signal is asserted at the column address strobe input, thereby latching data present in the one memory cell prior to assertion of the column address strobe signal in the first data latch. Second latch control means, responsive to the column address strobe input, electrically couples the first data latch and the second data latch when a column address strobe signal is asserted at the column address strobe input and electrically decouples the first data latch and the second data latch when a column address strobe signal is deasserted at the column address strobe input, thereby latching data present in the first data latch prior to deassertion of the column address strobe signal in the second data latch.

Memory device with fast extended data out (EDO) mode and methods of

A data output buffer of a semiconductor integrated circuit is operable in response to data input to data lines and comprises a first pull-down control circuit which generates a first pull-down signal in response to the data input to the data lines. A second pull-down control circuit generates a second pull-down signal in response to the data input to the data lines, the second pull-down signal being generated at a predetermined time after the first pull-down signal is generated and causing the first pull down signal to be deactivated. A first pull-down transistor shares an output node with a pull-up transistor and is responsive to the first pull-down signal to pull-down a predetermined amount of voltage at the output node. A second pull-down transistor is responsive to the second pull down signal for pulling down a residual amount of voltage at the output node.

Growing community of inventors

Kyungki-do, South Korea

Kyung-woo Kang