Skhynix Inc.

Kyung-Wan Kim

Jong-Chul Lee

Jong-Gi Kim

Yong-Taek Park

An electronic device may include a semiconductor memory. The semiconductor memory may include a stack in which a plurality of dielectric layers and a plurality of first electrodes are alternately stacked over a substrate in a vertical direction relative to the substrate; a hole pattern passing through the stack in the vertical direction and having a polygonal shape when viewed in a plan view; a plurality of second electrodes disposed on respective sidewalls of the hole pattern; and a plurality of variable resistance layers interposed between the plurality of second electrodes and the plurality of horizontal electrodes.

Electronic device including semiconductor memory that includes a plurality of vertical electrodes separately disposed on respective sidewalls of hole pattern

A threshold switching device may include: a first electrode layer; a second electrode layer; an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects; and an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.

Threshold switching device and electronic device including the same

A method for fabricating a semiconductor device and a method for operating the semiconductor device are provided. The method for fabricating a semiconductor device includes forming a first electrode layer; forming a material layer, including conductive path components, over the first electrode layer; forming a second electrode layer over the material layer; performing a forming operation, which includes initially creating, in the material layer, a conductive path that electrically connects the first electrode layer to the second electrode layer by applying one of a predetermined voltage and a predetermined current between the first and second electrode layers, the conductive path including the conductive path components; and performing a first heat-treatment process at a predetermined temperature that removes some of the conductive path components from the conductive path, wherein a resistance state of the material layer changes based on the creation or dissolution of the conductive paths.

Method for fabricating semiconductor device and method for operating the same

A method for operating an electronic device including a variable resistance element comprises performing a reset operation on the variable resistance element. The variable resistance element is fully reset by a first reset voltage applied thereto. The performing of the reset operation includes applying a second reset voltage to the variable resistance element, the second reset voltage having a magnitude smaller than that of the first reset voltage, determining whether the variable resistance element is mildly reset or not, and applying a third reset voltage to the variable resistance element when it is determined that the variable resistance element is mildly reset, or terminating the reset operation when it is determined that the variable resistance element is fully reset, the third reset voltage having a magnitude smaller than that of the first reset voltage.

Electronic device including variable resistance element and method for operating the same

An electronic device includes a semiconductor memory. The semiconductor memory includes a line-type first electrode layer having at least one protrusion and extending in a first direction, and a plurality of memory elements, each memory element including a variable resistance layer and a second electrode, the variable resistance layers of the memory elements being disposed over a top surface and two parallel side surfaces of the protrusion, respectively, the two parallel side surfaces of the protrusion being arranged in the first direction, the second electrodes of the memory elements being disposed over the variable resistance layers of the memory elements, respectively.

Electronic device

An electronic device includes a semiconductor memory that includes: a memory cell coupled between a first line and a second line; a first selection block configured to select the first line; a second selection block configured to select the second line; an alternate current supply block configured to supply, during a read operation, an alternate current corresponding to a resistance state of the memory cell; and a sensing block configured to sense, during the read operation, at least one of a cell current flowing through the memory cell and the alternate current.

Electronic device and method for driving the same

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a vertical electrode formed over a substrate; a plurality of first memory elements and a plurality of first interlayer dielectric layers alternately stacked along a first side surface of the vertical electrode; and a plurality of second memory elements and a plurality of second interlayer dielectric layers alternately stacked along a second side surface of the vertical electrode, and the plurality of first memory elements correspond to the plurality of second interlayer dielectric layers, respectively, in the vertical direction.

Provided is an electronic device including a semiconductor memory. The semiconductor memory includes first and second selecting elements coupled to a variable resistance element, and each of the first and second selecting elements includes a single-electron transistor.

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Icheon, South Korea

Kyung-Wan Kim