General Electric Company

Martin Marietta Corporation

Harris Corporation

Kyung W Paik

Constantine A Neugebauer

Homer H Glascock, Ii

James G McMullen

Robert J Wojnarowski

William P Kornrumpf

James Wilson Rose

Mario Ghezzo

Eric J Wildi

Michael Gdula

Vikram Bidare Krishnamurthy

Wolfgang Daum

William Andrew Hennessy

Martha M Neugebauer

A method for fabricating a thin film resistor comprises applying a tantalum nitride layer over a dielectric layer, applying a metallization layer over the tantalum nitride layer, and patterning the metallization layer with a first portion of the metallization layer situated apart from a second portion of the metallization layer and both the first and second portions being at least partially situated on the tantalum nitride layer. In one embodiment, after patterning the metallization layer, the resistance value between the first and second portions of the metallization layer is determined and compared to a predetermined resistance value, and at least one of the first and second portions is trimmed to obtain a modified resistance value between the first and second portions that is closer to the predetermined resistance value than the determined resistance value.

Method of forming thin film resistors on organic surfaces

A magnetic circulator is incorporated into a multi-chip module using a microwave high density interconnect (HDI) structure. A prepackaged circulator can be inserted into a ready-made high density interconnected multi-chip module; this prepackaged circulator may use a stripline design having a signal line with two ground planes above and below the signal line, or a microstrip transmission line design having one signal line and one ground plane below the signal line. Alternatively a circulator can be manufactured directly in a high density interconnected multi-chip module, with a stripline, or a microstrip transmission line design.

Fabrication of compact magnetic circulator components in microwave

Thin film resistors on organic surfaces

A process for direct bonding a copper film to an yttria-doped aluminum nitride substrate comprises treating the substrate by preoxidation at elevated temperature to create an overlying thin film of Al.sub.2 O.sub.3, followed by step cooling to a lower temperature. A copper foil of thickness between 1.0 and 4.0 microns and generally perforated or otherwise foraminous, is eutectically direct bonded to the substrate by the known direct bond copper (DBC) process. The resultant article exhibits high thermal conductivity, low permittivity and high mechanical strength. The peel strength of the copper film on the AlN substrate exceeds the peel strengths previously attainable in the industry.

Direct bonding of copper to aluminum nitride substrates

A method for attaching a chip to a substrate includes providing the substrate with an outer layer of an electrical conductor which is not wettable by solder and which has a window exposing an inner layer of electrical conductor that is wettable by solder. A solder preform is placed on the window exposing the inner layer, and the chip is placed on the solder preform. The substrate is then heated so as to melt the solder preform. To achieve planarity, the substrate is be positioned in a pressurizing chamber with a film overlay having higher pressure above the film overlay than underneath the overlay, and heated above the melting point of the solder.

Process for self-alignment and planarization of semiconductor chips

Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.

Direct thermocompression bonding for thin electronic power chips

Method for forming semiconductor electrical contacts using metal foil

Growing community of inventors

Clifton Park, NY, United States of America

Kyung W Paik