Samsung Electronics Co., Ltd.

Il Dong Pharmaceutical Co., Ltd.

Ildong Pharm Co., Ltd.

Idience Co., Ltd.

Kyung-Sun Kim

Dong-Keun Song

Yoon-Suk Lee

Sun-Young Park

Jae-Hoon Kang

Hong-Sub Lee

Jin-Ah Jeong

Jeong-Geun Kim

Chang-Hee Hong

Kyung-Mi An

Sung-Wook Kwon

Joon-Tae Park

Yong-Don Yun

Sang-Ho Lee

Dougyong Sung

Jeong-Ah Kim

Jeong-Guen Kim

Kyeo-Jin Kim

Ji-Hye Choi

Hey-Min Hwang

An-Na Moon

Ju-Young Jung

Jae-Hoon Kim

Jung Min Kim

Jeong-yun Lee

Tae-Gon Kim

Kyung-Yub Jeon

Seung Bo Shim

Dongwan Kim

Donghyeon Na

Heungsik Park

Nam Kyun Kim

Kangmin Jeon

Tae-Hwa Kim

Doug-Yong Sung

Myeongsoo Shin

Naohiko Okunishi

Seongha Jeong

Ohyung Kwon

Soo-Jin Lee

Jun-Su Ban

Seong-Chul Choi

Ungyo Jung

Yoong Chung

Kang Min Jeon

Seong-Moon Ha

Sung-Ku Choi

Min-Kyu Sung

Kyu-Sic Jang

Seung-Hee Cho

The present disclosure provides autotaxin (ATX) inhibitor compounds and compositions including said compounds. The present disclosure also provides methods of using said compounds and compositions for inhibiting ATX. Also provided are methods of preparing said compounds and compositions, and synthetic precursors of said compounds.

Autotaxin inhibitor compounds

The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.

Isoxazole derivatives as nuclear receptor agonists and uses thereof

Adenosine receptor (e.g., A2A and/or A1 receptor) antagonist compounds and compositions including said compounds are disclosed. The present disclosure also provides methods of using said compounds and compositions for modulating (e.g., inhibiting or antagonizing) A2A and/or A1 receptor in a biological system. The compounds and compositions find use in various therapeutic applications including the treatment of central nervous system or neurodegenerative diseases, such as Parkinson's disease. The compounds and compositions may also find use in various therapeutic applications including the treatment of cancer and in immuno-oncology.

Prevention and/or treatment of CNS disorders

A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

Plasma processing apparatus and method of fabricating semiconductor device using same

The present invention relates to phthalazinone derivatives, including pharmaceutical compositions and for the preparation of phthalazinone derivatives. And more particularly the present invention provided a pharmaceutical composition of phthalazinone derivatives for inhibiting activity of the Poly(ADP-riboside) polymerase enzyme.

Phthalazinone derivatives and manufacturing process thereof

The present invention relates to isoxazole derivatives, including pharmaceutical compositions and for the preparation of isoxazole derivatives. And more particularly the present invention provided a pharmaceutical composition of isoxazole derivatives for activation of Farnesoid X receptor (FXR, NR1H4).

A temperature controller of a plasma-processing apparatus including a heating unit and a cooling unit. The heating unit is configured to heat a liner on an inner surface of a plasma chamber in which a plasma is formed. The cooling unit is configured to cool the liner to controls a temperature of an upper electrode in the plasma chamber.

Temperature controller and a plasma-processing apparatus including the same

An electrostatic chuck assembly includes a dielectric plate having an absorption electrode to generate an electrostatic force, the dielectric plate securing a substrate by the electrostatic force, a conductive base plate under the dielectric plate to be applied with a high frequency electric power, the conductive base plate being an electrode to generate plasma, and an insulating plate under the base plate, the insulating plate having an insulation body and an insulation sink, and the insulation sink having a dielectric constant lower than that of the insulation body.

Electrostatic chuck and plasma apparatus for processing substrates having the same

Phtalazinone derivatives and manufacturing process thereof

Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Substrate manufacturing method and substrate manufacturing apparatus

An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.

Etching apparatus and etching method

Growing community of inventors

Gyeonggi-do, South Korea

Kyung-Sun Kim