Samsung Electronics Co., Ltd.

Ajou University Industry-Academic Cooperation Foundation

Samsung Electro-Mechanics Co., Ltd.

Seoul National University

Kyung-sang Cho

Byoung-lyong Choi

Tae-ho Kim

Byung-Ki Kim

Dae-young Chung

Jae-young Choi

Sang-jin Lee

Kwang-soo Seol

Byoung-Iyong Choi

Sang-wook Kim

Eun-joo Jang

Dong-hyeok Choi

Jae-Ho Lee

Sang-jin Park

Sun-ae Seo

Myoung-jae Lee

Chang-won Lee

Eun-kyung Lee

Youn-Seon Kang

Shin-Ae Jun

Young-Kwan Cha

Woong-chul Shin

Young Kuk

Jung-eun Lim

Byung-ki Kim

Seong-joon Lim

Soon-jae Kwon

Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle.

Nanoparticles passivated with cationic metal-chalcogenide compound

Provided are single photon devices, single photon emitting and transferring apparatuses, and methods of manufacturing and operating the single photon devices. The single photon device includes a carrier transport layer disposed on a conductive substrate and at least one quantum dot disposed on the carrier transport layer. A single photon emitting and transferring apparatus includes a single photon device, an element that injects a single charge into the single photon device described above, a light collecting unit that collects light emitted from the single photon device, and a light transfer system that transmits light collected by the light collecting unit to the outside.

Single photon device, apparatus for emitting and transferring single photon, and methods of manufacturing and operating the same

A method of manufacturing nanoparticles including: providing a metal chalcogenide complexes (MCC) hydrazine hydrate solution; providing a first organic solution of nanoparticles with first organic ligands; forming a mixed solution by mixing the MCC hydrazine hydrate solution and the first organic solution of nanoparticles capped with the first organic ligands; and replacing the first organic ligands of the nanoparticles with ligands of the MCC hydrazine hydrate.

Nanoparticles and methods of manufacturing the same

A particle has a permanent dipole moment, a film includes the particle, and a method of forming the film includes aligning the particle on a surface. The particle has a permanent dipole moment and includes heterogeneous materials, wherein a positive pole is located in a first material and a negative pole is located in a second material different from the first material. The method includes aligning a particle such that the particle has one dipole moment direction. The film includes the aligned particles.

Particles having permanent dipole moment, films including the particles, and methods of preparing the films

A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the sacrificial layer, the quantum dot layer and the stamp; and removing the sacrificial layer from the quantum dot layer using a solution that dissolves the sacrificial layer.

Method of manufacturing quantum dot layer and quantum dot optoelectronic device including the quantum dot layer

An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer.

Optoelectronic devices

A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer ('HIL'), a hole transport layer ('HTL'), an emitting layer, an electron transport layer (&#x201c;ETL&#x201d;), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

Light-emitting device having enhanced luminescence by using surface plasmon resonance and method of fabricating the same

A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

Quantum dot light emitting device having quantum dot multilayer

A white LED with an improved structure for high light emitting efficiency is provided. The white LED includes a light source device and a phosphor containing light emitting nanoparticles and an inorganic phosphor which emit white light by being excited by the light source.

White light emitting device

An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the light absorption and emission effects of quantum dots and can convert high energy light to low energy light. The efficiency of a solar cell may be improved by providing the cell with a film that converts light above the spectrum-responsive region to light in the cell's spectrum-responsive region. The absorption wavelength region of the films can be broadened by providing the quantum dot compound in a variety of average particle sizes, for example, by providing a mixture of a first quantum dot compound having a first average particle size and a first quantum dot compound having a second average particle size.

Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion layer including the quantum dot film, and solar cell including the energy conversion layer

A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.

Nonvolatile memory device including nano dot and method of fabricating the same

A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.

Quantum dot electroluminescence device and method of fabricating the same

A method of surface treating a phase change layer may include, before forming the phase change layer, forming a coating layer on a surface of a bottom layer on which the phase change layer is to be formed, wherein the coating layer has a chemical structure for contributing to the adherence of an alkyl radical to the surface of the bottom layer. After forming the coating layer, the phase change layer may be formed using an atomic layer deposition (ALD) method.

Growing community of inventors

Gwacheon-si, South Korea

Kyung-sang Cho