Lg Chem, Ltd

Kyung Moon Ko

Yeong Rae Chang

Dong Hyun Kim

Cheol Hee Park

Min Kyoung Kim

Chee Sung Park

Myung Jin Jung

Yu Ho Min

Yeongrae Chang

Jinseok Byun

Jin Young Park

Kyun Il Rah

So Young Kim

Jin Seok Byun

Jae Hyun Kim

Jung Hyun Seo

Hanna Lee

Na Young Shin

Kwangseok Seo

Yongjoon Heo

Sang Heon Lee

Jong Soo Do

Jin Yeung Lee

Changoh Kim

The present disclosure relates to an anti-reflective film comprising: a hard coating layer; and a low refractive index layer, wherein a particle-mixed layer containing both hollow inorganic nanoparticles and solid inorganic nanoparticles and having a thickness of 1.5 nm to 22 nm exists in the low refractive index layer, and wherein the anti-reflective film has an absolute value of b* value in a CIE Lab color space of 4 or less, and a polarizing plate, a display device, and an organic light emitting diode display device comprising the anti-reflective film.

Anti-reflective film

The present disclosure relates to an anti-reflective film comprising: a hard coating layer; and a low refractive index layer, wherein a particle-mixed layer containing both hollow inorganic nanoparticles and solid inorganic nanoparticles and having a thickness of 1.5 nm to 22 nm exists in the low refractive index layer, and wherein the anti-reflective film has a ratio of the reflectance at a wavelength of 400 nm to the reflectance at a wavelength of 550 nm of 1.3 to 2.7, and a polarizing plate, a display device, and an organic light emitting diode display device comprising the anti-reflective film.

An optical laminate or a reddening-resistant layer. The optical laminate that does not cause a reddening phenomenon even when driven or maintained under extremely harsh conditions (e.g., very high temperature conditions), or a reddening-resistant layer applied thereto.

Optical laminate

The present disclosure relates to an anti-reflective film capable of realizing high scratch resistance and anti-fouling property simultaneously while having low reflectance and high light transmittance deviation, and further capable of enhancing screen sharpness of a display apparatus, a polarizing plate and a display apparatus including the same.

Anti-reflective film, polarizing plate, and display apparatus

The present disclosure relates to a cover window for a flexible display device comprising: a light-transmitting substrate; and a first hard coating layer and a second hard coating layer which are formed on both sides of the light-transmitting substrate, respectively, wherein each of the first hard coating layer and the second hard coating layer has IR spectra in which a ratio of the amide C═O peak to the ester C═O peak is in a predetermined range, and a flexible display device including the cover window for a flexible display device.

Cover window for flexible display device and flexible display device

The present disclosure relates to an anti-reflective film capable of simultaneously realizing high scratch resistance and antifouling property, and increasing a screen sharpness of a display apparatus, a polarizing plate and a display apparatus including the same.

The present invention relates to an anti-reflective film having mechanical properties such as high abrasion resistance and scratch resistance and excellent optical properties, and a polarizing plate and a display apparatus including the same.

A compound semiconductor which has an improved thermoelectric performance index together with excellent electrical conductivity, and thus may be utilized for various purposes such as a thermoelectric conversion material of thermoelectric conversion devices, solar cells, and the like, and to a method for preparing the same.

Compound semiconductor and use thereof

A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a low temperature, particularly at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same:VMSnBiSeTe&#x2003;&#x2003;[Chemical Formula 1]In the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, and y is greater than 0 and less than or equal to 1.

Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same

A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index (ZT) through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same:VMSnPbBiSeTe&#x2003;&#x2003;[Chemical Formula 1]In the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, y is greater than 0 and less than 4, and z is greater than 0 and less than or equal to 1.

The present invention relates to a novel chalcogen-containing compound that exhibits excellent phase stability even at a temperature corresponding to the driving temperature of a thermoelectric element, and has a high output factor and thermoelectric figure of merit, a method for preparing the same, and a thermoelectric element including the same.

The present invention provides a novel compound semiconductor that has improved thermoelectric figure of merit as well as excellent electric conductivity, and thus, can be applied for various uses such as thermoelectric conversion material of a thermoelectric conversion device, a solar battery, and the like, and a method for preparing the same.

A novel compound semiconductor that can be used for a solar battery, a thermoelectric material, and the like, and use thereof. The novel compound semiconductor may be represented by the following Chemical Formula: NdSCoSbQ, wherein Q is one or more selected from the O, Se, or Te, 0&#x3c;x&#x3c;0.2, 0&#x3c;y&#x2264;1, and 0&#x3c;z&#x3c;12.

A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: MVSnSbTe, wherein V is vacancy, M is at least one alkali metal, x&#x2265;6, and 0&#x3c;y&#x2264;0.4.

A novel compound semiconductor which can be used for a solar cell, a thermoelectric material, or the like, and the use thereof.

Growing community of inventors

Daejeon, South Korea

Kyung Moon Ko