Samsung Electronics Co., Ltd.

Kyung-Min Kang

Dongku Kang

HyunJin Kim

Kwang Won Kim

Jong-Nam Baek

Sangwon Hwang

A nonvolatile memory device includes a memory cell array including first to fourth planes, a page buffer circuit that includes first to fourth page buffer units connected with the first to fourth planes, respectively, an input/output circuit that includes a first input/output unit connected with the first to fourth page buffer units and a second input/output unit connected with the second and fourth page buffer units, and control logic that controls the input/output circuit to output first data from one of the first to fourth page buffer units through the first input/output unit in a first read mode and output second data from one of the first and third page buffer units through the first input/output unit and third data from one of the second and fourth page buffer units through the second input/output unit in a second read mode.

Operating method of a storage device including a nonvolatile memory device and a controller

Nonvolatile memory device including a plurality of input/output units and an operating method thereof

A non-volatile memory device includes a cell array including a plurality of memory cells, a page buffer block controlling bitlines of the plurality of memory cells to program the memory cells to a first target state or a second target state, and a control logic configured to skip a verify operation for the memory cells programmed to the first target state and perform a verify operation for the memory cells programmed to the second target state during a second program loop when the memory cells programmed to the first target state are determined to be in a pass condition during a first program loop.

Non-volatile memory device and page buffer circuit thereof

Growing community of inventors

Hwaseong-si, South Korea

Kyung-Min Kang