Samsung Display Co., Ltd.

Samhwa Paints Industries Co., Ltd.

Dongguan Dyt Electronic Tape Co., Ltd.

Kyung Lae Rho

Na Ri Ahn

Young Do Kim

Young Gil Park

Soo Im Jeong

Jun Su Park

Young Moon Kim

Ki Cheol Song

Ji Hye Seo

Hyun Sook Kim

Sung Chan Jo

Jang Doo Lee

Jang Hwan Jeong

Seung Kyu Lee

Do Hyung Kim

Sung Woo Kim

Jae Ho Choi

Sung Hwan Kim

Chang Ho Lee

Sung Su Kim

Chang Yong Jeong

Sang Won Shin

Sang Woo Sohn

Sung-Chan Jo

Jang Ho Lee

Doo Hyoung Lee

Mi Hyang Sheen

Soon Jong Kim

Seong Gea Kim

Jae Duck Jung

Dong Hyeok Oh

Kyoung Seok Cho

Oh Jung Kwon

Jung Hun Kim

Sung Wook Woo

Oh Nam Kwon

Jae Gwan Lee

Ki Young Yeon

A method of manufacturing a light-emitting element, and a light-emitting element array substrate and a display device including the same are provided. A method of manufacturing a light-emitting element includes: forming a base substrate including a plurality of protrusions and a rod area which is a remaining area except for the plurality of protrusions; forming a buffer layer on the base substrate; forming a semiconductor structure including a first semiconductor material layer, a light-emitting material layer, and a second semiconductor material layer on the buffer layer; forming a plurality of mask patterns overlapping the rod area on the semiconductor structure; forming element rods by removing the semiconductor structure overlapping the plurality of protrusions using the plurality of mask patterns; forming an insulating film around an outer surface of each of the element rods. and separating the element rods from the buffer layer.

Method of manufacturing light-emitting element, and light-emitting element array substrate and display device including the same

A display device includes a display panel including a front surface and a second surface which is opposite to the front surface; a front laminated structure attached to the front surface of the display panel; and a rear laminated structure attached to the second surface of the display panel. Each of the front laminated structure and the rear laminated structure includes a bonding member, and an average modulus of the bonding member of the front laminated structure is smaller than an average modulus of the bonding member of the rear laminated structure.

Display device including bonding member

A resin composition according to an exemplary embodiment of the present disclosure includes a first polyol represented by Chemical Formula 1, a second polyol represented by Chemical Formula 2, and a polyisocyanate, wherein the first polyol and the second polyol have a linear structure without a side chain. each of Yto Yis H or OH—, at least one of Yand Yis OH—, at least one of Yand Yis OH—, each of Xto Xis independently a C-Calkyl group, the alkyl group includes or does not include an unsaturated bond, —CH— in the alkyl group may be substituted or unsubstituted with —CHOH—, and each of n and m is independently 1 to 200.

Resin composition and manufacturing method of coating layer using the same

Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.

Acrylic adhesive and protective film including the same

A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

Transistor and display device having the same

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Yongin-si, South Korea

Kyung Lae Rho