Tdk Corporation

Kyung-Ku Choi

Kenichi Suzuki

Ryuji Hashimoto

Toshiyasu Fujiwara

Atsushi Iijima

Akifumi Kamijima

Daisuke Tanaka

Akio Ogawa

Taku Murase

Yasushi Enokido

Hitoshi Yamaguchi

Tatsuo Namikawa

Takashi Ohtsuka

Daisuke Iwanaga

Katsunori Osanai

Tsutomu Chikamatsu

Yohtaro Yamazaki

Yukio Sakashita

Hitoshi Sakuma

Toshio Sakurai

Kiyoshi Hatanaka

Tomohiro Arashi

Taku Masai

Raitarou Masaoka

Kenichi Nishikawa

A magnetically actuated MEMS switchincludes a first magnetic core portion, a first signal line, a first contact point, a second magnetic core portion, a second signal line, a second contact point, and a first coil portionand a second coil portionserving as a magnetic field applying portion that causes a current to flow in conductor coil to apply a magnetic field to the first magnetic core portionand the second magnetic core portion. The first contact pointis displaced depending on the presence or absence of a magnetic field applied by the magnetic field applying portion. Connection and disconnection between the first contact pointand the second contact pointare switched in response to displacement of the first contact point

Magnetically actuated MEMS switch

A R-T-B based permanent magnet which has equivalent magnetic properties as the existing Nd&#x2014;Fe&#x2014;B based permanent magnet and light mass but also can be suitably used as a magnet for field system of a permanent magnet synchronous rotating machine. The magnet can be obtained in a case where the composition of the compound for forming the main phase is (R(YCe))TB (R is rare earth element(s) consisting of one or more elements selected from La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, Y is yttrium, Ce is cerium, T is one or more transition metal elements with Fe or Fe and Co as essential element(s), B is boron, 0.0&#x3c;x&#x2264;0.5 and 0.0&#x2264;z&#x2264;0.5), by making the abundance ratio of Y/(Y+Y) in relation to the Y occupying the 4f site of the tetragonal RTB structure (i.e., Y) and the Y occupying the 4g site (i.e., Y) satisfies 0.8&#x2264;Y/(Y+Y)&#x2264;1.0.

R-T-B based permanent magnet

A magnetic measurement device which can measure the magnetic characteristics in a microregion of a thin plate magnetic sample. After a magnetic sample is applied by a magnetic field and magnetized accordingly, by scanning the magnetic sample using a measuring part, the magnetic flux leakage in the magnetic sample can be measured. The magnetic flux leaks outside by magnetizing a first region and a second region of the magnetic sample in reciprocally opposite directions and reducing the demagnetizing field. Specifically, a magnetic field generating part with at least a pair of magnetic poles is used to perform the magnetization of multiple poles, or the magnetic field generating part applies a damped oscillation magnetic field to perform the magnetization, or a local magnetic field generating part which applies an alternating magnetic field and scans the surface of the sample at the same time is used to perform the magnetization.

Magnetic measurement device

The present invention provides a permanent magnet with excellent adhesion strength with plated layer and without significant decrease in magnetic properties, compared to the conventional R-T-B based magnet. By means that the R-T-B based magnet as the raw material is applied to heating treatment for a long time, the major phase grains will form core-shell like structures in the R-T-B based magnet in which R1 and Ce are included as an essential of R. When the mass concentration of R1 and Ce in the core portion is set as &#x3b1;R1 and &#x3b1;Ce respectively and that of R1 and Ce in the shell portion is set as &#x3b2;R1 and &#x3b2;Ce respectively, the ratio (B/A) between the mass concentration ratio of R1 to Ce in the shell portion (&#x3b2;R1/&#x3b2;Ce=B) and that of R1 to Ce in the core portion (&#x3b1;R1/&#x3b1;Ce=A) is 1.1 or more.

R-T-B based sintered magnet

An R-T-B based magnet as raw material undergoes heating treatment for a long time and main phase grains turn core-shell like. The R-T-B based magnet includes main phase grains having core and shell portions that covers the core. When the mass concentration of R1 and Y in the core portion is set as &#x3b1;R1 and &#x3b1;Y respectively and the mass concentration of R1 and Y in the shell portion is set as &#x3b2;R1 and &#x3b2;Y respectively, the ratio (B/A) between the mass concentration ratio of R1 to Y in the shell portion (&#x3b2;R1/&#x3b2;Y=B) and the mass concentration ratio of R1 to Y in the core portion (&#x3b1;R1/&#x3b1;Y=A) is 1.1 or more. Thus, the decrease of coercivity caused by Y addition is prevented, and the increase effect of temperature characteristics caused by addition of Y will lead to improve the magnetic properties under high temperature.

A R-T-B based permanent magnet which not only has equivalent magnetic properties as the existing Nd&#x2014;Fe&#x2014;B based permanent magnet but also has a high adhesive strength and which can be suitably used as a magnet for field system of a permanent magnet synchronous rotating machine. The magnet can be obtained in a case where the composition of the compound for forming the main phase is (R(CeY))TB (R is rare earth element(s) consisting of one or more elements selected from La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, T is one or more transition metal elements with Fe or Fe and Co as essential element(s), 0.0&#x3c;x&#x2266;0.5 and 0.0&#x2266;z&#x2266;0.5), by making the abundance ratio of Ce/(Ce+Ce) satisfies 0.8&#x2266;Ce/(Ce+Ce)&#x2266;1.0 when the Ce occupying the 4f site of the tetragonal RTB structure is denoted Ceand the Ce occupying the 4g site is denoted as Ce.

The present invention provides such a permanent magnet that its magnetic properties will not significantly decrease and it can be prepared at a lower temperature, compared to conventional R-T-B based permanent magnets. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Ce-T-B based crystal layer can be formed by alternatively stacking the R1-T-B based crystal layer and the Ce-T-B based crystal layer. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the crystallization temperature can be lowered by the Ce-T-B based crystal layer.

A magnetic measurement device which measures coercivity and coercivity distribution in a microregion of a thin plate magnetic sample with high coercivity. A magnetic sample is applied with a magnetic field in a first direction and magnetized, a second magnetic field is applied in a direction opposite to the first, a measuring part scans the sample, measuring magnetic flux leakage due to remnant magnetization in the sample. The intensity of the second magnetic field is gradually increased while the measuring part repeats the measurement to obtain the second magnetic field wherein the magnitude of the leakage from the sample reaches the maximum level, and when a magnetic field equivalent to the coercivity is applied to the sample and about half of the magnetization is reversed, the sample's coercivity is obtained based on the determination that the demagnetizing field Hd reaches the minimum level and the leakage reaches the maximum level.

The present invention provides a permanent magnet whose magnetic properties will not be significantly decreased and which is excellent in the temperature properties compared to the existing R-T-B based permanent magnet. In the R-T-B based structure, a stack structure of R1-T-B based crystallizing layer and (Y,Ce)-T-B based crystallizing layer can be formed by alternatively stacking R1-T-B and (Y,Ce)-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystallizing layer can be maintained while an improved temperature coefficient of the (Y,Ce)-T-B based crystallizing layer can be obtained. Further, a high coercivity can be obtained by adding the Ce-T-B based crystallizing layer with a low lattice distortion to the Y-T-B based crystallizing layer.

The present invention provides a permanent magnet which is excellent in the temperature properties and the magnetic properties of which will not be significantly decreased, compared to the conventional R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Y-T-B based crystal layer can be formed by alternatively stacking R1-T-B and Y-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the temperature coefficient of the Y-T-B based crystal layer can be improved.

A dielectric ceramic composition includes a component represented by composition formula {&#x3b1;(xBaO.yNdO.zTiO)+&#x3b2;(2MgO.SO)} as a main component and zinc oxide, boron oxide, and a glass having a softening point equal to or lower than a certain temperature as minor components with respect to the main component. In the dielectric ceramic composition, x, y, and z that respectively represent molar ratios of BaO, NdO, and TiOare in certain ranges and &#x3b1; and &#x3b2; that represent volume ratios of subcomponents (xBaO.yNdO.zTiOand 2MgO.SiO) in the main component are in certain ranges. When the minor components are respectively represented by aZnO, bBO, and cglass, a, b, and c that represent mass ratios of the respective minor components to the main component are in certain ranges.

Dielectric ceramic composition

The invention provides an electronic component and a manufacturing method thereof that can achieve an improved adhesion strength when the electronic component is solder-mounted onto an external substrate and can thereby obtain considerably improved electric properties and reliabilities, etc. An electronic component, which is a capacitor, has: a circuit elementformed on a substrate; an electrode layerconnected to the circuit element; passivation layersandthat cover the electrode layer; and terminal electrodesandconnected to the electrode layervia via-conductors Va and Vb formed through the passivation layersand, the terminal electrodesandbeing formed to cover the side wall of the passivation layersand. Since the pad electrodesandare formed so as to cover the passivation layersandacross their uppermost surfaces and side walls, the area of contact between the pad electrodesandand the solder for solder-mounting increases, and the capacitorcan consequently exhibit an improved adhesion strength.

Electronic component and manufacturing method thereof

The invention provides an electronic component and a manufacturing method thereof that: can allow electronic components to be mounted on an external substrate at a higher density than before; can adjust the height (level) of a terminal electrode as required and desired, thereby solving problems that would occur in the inspection of the conventional electronic components; and can also improve the yield in the mounting of electronic components, thereby achieving increased productivity. A capacitor, which is an electronic component, has: a first upper electrodeformed above a substrate; a first seatand a second seatwhich are formed adjacent to the first upper electrode; passivation layersandthat cover the first upper electrodeand the first and second seatsand; and a terminal electrodeformed above the first and second seatsandand connected to the first upper electrodevia via-conductors Va and Vc which are formed through the passivation layersandrespectively.

It is an object of the present invention to provide an electronic component module with which circuit malfunction can be adequately prevented. There are provided a base having wiring, and a thin-film magnetic device provided on one side of the base. The thin-film magnetic device comprises a first magnetic film disposed facing the base, a second magnetic film disposed on the opposite side of the first magnetic film with respect to the base, and a thin-film coil wound so as to encircle the second magnetic film a plurality of times. The thin-film coil has a plurality of first conductor pattern components provided between the first and second magnetic films, a plurality of second conductor pattern components provided on the opposite side of the second magnetic film with respect to the first magnetic film, and a plurality of connecting conductors that connect the first conductor pattern components and the second conductor pattern components in series. The relative magnetic permeability of the second magnetic film is greater than the relative magnetic permeability of the first magnetic film.

Growing community of inventors

Tokyo, Japan

Kyung-Ku Choi