Samsung Sdi Co., Inc.

Kyung-jin Yoo

Woo-Young So

Kyu-hwan Choi

Sang-il Park

Sang-Il Park

Sang-II Park

A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive layer; patterning the conductive layer according to the photosensitive pattern to form a gate electrode; and ion-doping an impurity into the semiconductor layer using the photosensitive pattern as a mask to form source and drain regions.

Methods of manufacturing thin film transistors using masks to protect the channel regions from impurities while doping a semiconductor layer to form source/drain regions

A flat panel display device with improved electrical characteristics and a simplified manufacturing process is disclosed. The device includes a semiconductor layer formed on an insulating substrate; source and drain electrodes directly contacting both end portions of the semiconductor layer, respectively; a pixel electrode having an opening portion formed thereon; a first insulating layer formed over the remaining portion of the insulating substrate except for the opening portion; a gate electrode formed on a portion of the first insulating layer over the semiconductor layer; and source and drain regions formed in both end portions of the semiconductor layer.

Method of manufacturing flat panel display device

Flat panel display device

Growing community of inventors

Suwon, South Korea

Kyung-jin Yoo