Samsung Electronics Co., Ltd.

Coway Co., Ltd

Korea Institute of Science and Technology

Kyung-Hwan Lee

Kohji Kanamori

Yong-Seok Kim

Jun-Hee Lim

Chang-seok Kang

Jae-Ho Song

Byung-Wook Kim

Se-Jin Kim

Myung-Hoon Yeon

Doo-Hee Lee

Seong-Joon Kim

Chan-Jung Park

Jin Yong Kim

Jong-Chul Choi

Jong-Min Kim

Hyungwoo Lee

Jun-Mo Yoo

Hyung-Tae Kim

Jong-Cheon Wee

Seungyeon Kim

Hyun-Jin Hong

Hyung-Woo Lee

Eun-jae Lee

Ki-young Kim

Kyung-Tae Hong

Jin-Kook Yoon

Hwan-Seok Choi

Jung-Man Doh

Young-Kwang Choi

Keun-Hyung Son

Jong-Kwon Lee

Gyeung-Ho Kim

Jun-Young Yoo

You-Sub Shim

Sang-Un Yun

A method for operating a terminal in a wireless communication system is provided. The method includes at least one of transmitting data to and receiving data from a primary cell using a first Radio Frequency (RF) path, and, when a secondary cell is deactivated, operating a second RF path to perform searching and measurement with respect to at least one target cell at a frequency different from a frequency of the primary cell.

Apparatus and method for managing measurement gap in wireless communication system

A method of operating a terminal is provided. The method includes: selecting a first pattern as a pattern of a reception beam; searching for cells in the wireless communication system using the reception beam of the first pattern; determining a first candidate group including at least one candidate for a beam pattern pair with the first pattern of the reception beam, wherein each of the at least one candidate corresponds to a transmission beam pattern and a cell; determining whether to decode a physical broadcast channel received from a first candidate of the first candidate group; decoding the PBCH based on the determining; and selecting one of the transmission beam patterns for the beam pattern pair with the first pattern of the reception beam from the first candidate group based on the decoding.

Method of operating terminal in wireless communication system and the terminal

A vertical memory device includes gate electrodes on a substrate and a first structure. The gate electrodes may be spaced apart from each other in a first direction perpendicular to an upper surface of the substrate. The first structure extends through the gate electrodes in the first direction, and includes a channel and a variable resistance structure sequentially stacked in a horizontal direction parallel to the upper surface of the substrate. The variable resistance structure may include quantum dots (QDs) therein.

Vertical memory devices

In a method of writing data in a nonvolatile memory device including a plurality of cell strings, each of the plurality of cell strings includes a plurality of memory cells disposed in a vertical direction. A program target page is divided into a plurality of subpages. The program target page is connected to one of a plurality of wordlines. Each of the plurality of subpages includes memory cells that are physically spaced apart from one another. A program operation is sequentially performed on the plurality of subpages. A program verification operation is performed on the program target page including the plurality of subpages at a time.

Method of writing data in nonvolatile memory device, with divided subpages or subblocks, and method of erasing data in nonvolatile memory device with divided subpages or subblocks

An air purifying unit in which leakage of air flowing between a filter and a blowing fan is significantly reduced, and an air cleaning/ventilation device including the same, are provided. In addition, there are an air cleaning/ventilation device detachably installed in a window, used as a ventilation device, and used as an indoor air cleaning device.

Air purifying unit and air cleaning/ventilation device comprising same

A vertical semiconductor device includes conductive pattern structures extending in a first direction, a trench between two adjacent conductive pattern structures in a second direction crossing the first direction, a memory layer disposed on sidewalls of the trench, first insulation layers disposed in the trench and spaced apart from each other in the first direction, channel patterns disposed on the memory layer and in the trench and spaced apart from each other in the first direction, and etch stop layer patterns disposed in the trench. Each conductive pattern structure includes conductive patterns and insulation layers alternately stacked on an upper surface of the substrate. Each etch stop layer pattern is disposed between a corresponding first insulation layer and the blocking dielectric layer. Etch stop layer patterns are spaced apart from each other in the first direction.

Vertical semiconductor devices

A vertical semiconductor device includes a conductive pattern structure in which insulation patterns and conductive patterns alternately and repeatedly stacked on the substrate. The conductive pattern structure includes an edge portion having a stair-stepped shape. Each of the conductive patterns includes a pad region corresponding to an upper surface of a stair in the edge portion. A pad conductive pattern is disposed to contact a portion of an upper surface of the pad region. A mask pattern is disposed on an upper surface of the pad conductive pattern. A contact plug penetrates the mask pattern to contact the pad conductive pattern.

Vertical semiconductor devices and method of manufacturing the same

A vertical semiconductor device includes a conductive pattern structure, a memory layer, a pillar structure, and second and third insulation patterns. The conductive pattern structure includes conductive patterns and insulation layers, and may include a first portion extending in a first direction and a second portion protruding from a sidewall of the first portion. The conductive pattern structures are arranged in a second direction perpendicular to the first direction to form a trench therebetween. The memory layer is formed on sidewalls of the conductive pattern structures. The pillar structures in the trench, each including a channel pattern and a first insulation pattern formed on the memory layer, are spaced apart from each other in the first direction. The second insulation pattern is formed between the pillar structures. The third insulation pattern is formed between some pillar structures, and has a shape different from a shape of the second insulation pattern.

A coupling member that is attachable to/detachable from a housing of an electronic device while making the housing wearable on a user's body, and an electronic device including the coupling member is provided. The electronic device includes a band member that is configured to come in contact with a user's body portion, a slide member that is mounted on the band member, and is bound to a portion of the housing in a state where the coupling member is mounted on the housing, an opening that is formed in the slide member, a locking member that is disposed on the band member, and a locking protrusion that is formed on a locking member. The locking protrusion appears to the outside of the slide member through the opening according to the reciprocating of the locking member, and the coupling member is bound to the housing.

Coupling member and electronic device including the same

An electronic device includes a housing including a first plate, a second plate, and a side member a first band detachably mounted to the side member, and shaped to wrap around a wrist of a user; a display exposed through the first plate; a processor a memory and a mounting structure configured to connect the first band to the side member. The mounting structure includes a recessed structure formed in the side member, the recessed structure having a first surface, a second surface, a first hole formed in the first surface, and a second hole formed in the second surface, and facing the first hole, in which an imaginary line extending from the first hole to the second hole defines a first axis; a rotating member positioned to rotate around the first axis, the rotating member having a through-hole that has an inner screw surface centered around the first axis; a first rod extending along the first axis through a first portion of the first band, in which the first rod has a first end inserted into the first hole, and a second end held by the rotating member such that the first rod does not move along the first axis while the rotating member rotates; and a second rod extending along the first axis through a second portion of the first band. The second rod has: a third end rotatably inserted into the second hole; and an external screw surface engaged with the inner screw surface of the rotating member such that the second rod moves along the first axis while the rotating member rotates.

Band mounting structure and wearable electronic device including the same

There is provided a natural antimicrobial including a mixture of tree essential oils, soybean oil, and a residual hydrocarbon extract extracted from a rutaceae plant, wherein the mixture is supported in a supporter, and an article including the antimicrobial are provided. The antimicrobial is comprised of only natural materials, so it is harmless to human beings and environmentally friendly. Also, in the antimicrobial, tree essential oils is supported together with soybean carrier oil in a supporter, and thus, volatility of tree essential oils is controlled by the soybean oil, whereby the tree essential oils is naturally emitted to have an effective antibiosis for a long period of time. Thus, extra power, driving device (e.g., a fan), or the like, is not required to emit the tree essential oils. In addition, the antimicrobial is actively emitted in the air, having efficacy of continuously annihilate bacteria, virus, or the like.

Natural antimicrobials and article comprising the same

The embodiments of the invention relate to a MoSi-SiC nanocomposite coating layer formed on surfaces of refractory metals such as Mo, Nb, Ta, W and their alloys. The MoSi-SiC nanocomposite coating layer is manufactured by forming a molybdenum carbide (MoC and MoC) coating layers on the surfaces of the substrates at high temperature, and the subsequent vapor-deposition of Si. The MoSi-SiC nanocomposite coating layer has a microstructure in which SiC particles are mostly located on the equiaxed MoSigrain boundary. The MoSi-SiC nanocomposite coating layer can have a close thermal expansion coefficient to that of the substrate by controlling a volume fraction of SiC particles exisiting in the nanocomposite coating. As a result, the generation of cracks due to the mismatch in the thermal expansion coefficients between the substrate and the nanocomposite coating layer is suppressed and the high-temperature repeated thermal cyclic oxidation resistance and the low-temperature oxidation resistance of the coated substrate are improved.

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Growing community of inventors

Hwaseong-si, South Korea

Kyung-Hwan Lee