Korea Institute of Science and Technology

Lg Innotek Co., Ltd.

Kyung Ho Shin

Byoung Chul Min

Suk Hee Han

Jin Dong Song

Gyung-Min Choi

Gyung Min Choi

Hyun Woo Koo

Jae Hyun Park

Woo Young Lee

Ki Bum Kim

Bong Kul Min

Jun Woo Choi

Jin Seo Lee

Joon Yeon Chang

Jae Wan Shim

Chang Min Park

Hi Jung Kim

Kwan Hyi Lee

Kung Won Rhie

Jin Ki Hong

Song Eun Lee

Sang Hoon Shin

Sung Jung Joo

Dal Young Kim

Ju Young Lim

Kyoung Il Lee

Pyung W Chang

Min Hong Jeun

Hong G Sohn

Taek D Lee

Tae Yueb Kim

Hyo Sun Jang

Heung Yeol Yoo

A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L1-crystalline structure, and iii) a metal oxide layer located on the magnetic layer.

Perpendicularly magnetized thin film structure and method for manufacturing the same

The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (AB)C; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (AB)C. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

Method for manufacturing a magnetic tunnel junction device

An oscillator using spin transfer torque includes i) a pinned magnetic layer having a fixed magnetization direction, ii) a non-magnetic layer located on the pinned magnetic layer, and iii) a free magnetic layer located on the non-magnetic layer. The pinned magnetic layer includes i) a first part of the fixed magnetic layer and ii) a second part of the fixed magnetic layer located thereon. The first part of the fixed magnetic layer includes i) a first interface in contact with the second part of the fixed magnetic layer and ii) a second surface exposed to an outside while surrounding the first interface.

Oscillator using spin transfer torque

A light emitting module and a display device including the light emitting module are provided. The light emitting module may include a metal plate, a board, and a plurality of light emitting diodes. The board may be attached to a side surface of the metal plate, and light emitting diodes may be arranged on the board.

Light emitting module and display device having the same

Provided are a light emitting module and a backlight unit. The light emitting module comprises a module board comprising a plurality of first and second pads and a plurality of protrusion holes, a heatsink plate corresponding to a second surface opposite to a first surface of the module board, the heatsink plate comprising a plurality of protrusions respectively inserted into the protrusion holes of the module board, and a plurality of light emitting devices, each comprising a heatsink frame connected to the protrusions of the heatsink plate which comprises a first frame part on which the plurality of protrusions are disposed and a second frame part folded from the first frame part and disposed under the module board.

Light emitting module with heatsink plate having coupling protrusions

Magnetic tunnel junction device and method for manufacturing the same

Provided are a multilayer board and a light-emitting module having the same. The light-emitting module comprises a light-emitting diode chip and a multilayer board. The multilayer board is electrically connected to the light-emitting diode chip and comprises a nonconductive heat sink via and a thin copper layer.

Multilayer board and light-emitting module having the same

An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

Light-emitting diode package and manufacturing method thereof

A method for simulating fluid flow includes: discretizing a space in which a fluid flows into a regular lattice; assuming that fluid particles repetitively move and collide in the lattice; deriving a univariate polynomial equation by comparing the n-th (n is a non-negative integer) order momentum of velocity between the Maxwell-Boltzmann distribution and the discretized Maxwell-Boltzmann distribution; calculating the weight coefficients corresponding to the discrete velocities of the fluid particles based on the univariate polynomial equation; and deriving a lattice Boltzmann model using the weight coefficients. A lattice Boltzmann model with superior stability and accuracy may be derived easily.

Method for simulating fluid flow and recording medium for performing the method

A light emitting module including a board, a plurality of light emitting devices on the board, a resin disposed on the plurality of light emitting devices, and a phosphor film on the resin and extending along areas between the light emitting devices, wherein the light emitting devices are spaced from each other by a predetermined distance, wherein the phosphor film is divided into parts, the parts having different phosphors being one of a red phosphor, a green phosphor or a blue phosphor and corresponding respectively to the light emitting devices, and wherein the divided phosphor films are connected to each other and makes a continuous phosphor film layer.

A light emitting module and a display device having the same, are discussed. The light emitting module according to an embodiment comprises a board, a plurality of light emitting devices on the board, and a phosphor film covering the light emitting devices and covering and extending along areas between the light emitting devices.

A light unit includes a bottom cover, a light source unit, an optical sheet unit on the bottom cover, and a reflective support member. The reflective support member includes a reflection plate for reflecting light and a guide pin for supporting the optical sheet unit in the bottom cover.

Back-light unit with a reflective support member and display apparatus having the same

The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction and a second magnetic layer having a reversible magnetization direction. A non-magnetic layer is formed between the first magnetic layer and the second magnetic layer and a third magnetic layer allows the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer with a vertical magnetic anisotropic energy thereof larger than a horizontal magnetic anisotropic energy thereof. A crystal-structure separation layer is formed between the second magnetic layer and the third magnetic layer for separating a crystal orientation between the second and the third magnetic layers.

Magnetic tunnel junction structure having free layer with oblique magnetization

Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.

Magnetic tunnel junction structure with perpendicular magnetization layers

An InSb-based switching device, which operates at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements, is provided. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

Growing community of inventors

Seoul, South Korea

Kyung Ho Shin