Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Kyung-ho Lee

Jung-Chak Ahn

Yi-Tae Kim

Young-sun Oh

Yong-jin Kim

Kwang-Hyung Lee

Sae-Young Kim

Hee-geun Jeong

Jun-Kun Choi

Hwa-Young Oh

Dong-yoon Jang

Je-Hyun Bang

Moo-Sup Lim

Seungjoo Nah

Seok-Jun Park

Jae-Woo Jun

Jung-bin Yun

Sung-Ho Choi

Han Bit Kim

Wook Su Lee

Kijun Lee

Myungkyu Lee

Sunghye Cho

Kyomin Sohn

Young-hwan Park

Sang-il Jung

Gwi-Deok Ryan Lee

Eun-Sub Shim

Bum-Suk Kim

Sung-Han Kim

Sang-Chul Sul

Hyongryol Hwang

Mi-Sun Hwang

Ki-Heung Kim

Seok-Hwan Ahn

Yun-Ho Jang

Ki-Suk Woo

Seongmuk Kang

Young-woo Jung

Myung-won Lee

Tae-Sub Jung

Dong-young Jang

Shay Hamami

Jun-Suk Lee

Hiroshige Goto

Chul-Kyu Kim

Jee-Sung Lee

Young-Bok Yoon

Sang-Yul Ha

Sung-Jun Lim

Seong-Hwan Park

Kyung-Moon Jung

Suck-Jun Park

Hee-Sang Kwon

A memory device includes an ECC circuit that performs error correction code (ECC) encoding on input data to generate write data, and a memory cell array including a plurality of memory cells that stores the write data. The ECC circuit includes a data splitter that splits the input data into first sub-data and second sub-data, a first ECC encoder that performs ECC encoding on the first sub-data to generate first sub-parity data, a second ECC encoder that performs ECC encoding on the second sub-data to generate second sub-parity data, and a data scrambler that performs a data scrambling operation with respect to the first sub-data, the second sub-data, the first sub-parity data, and the second sub-parity data based on a structure of the memory cell array to generate the write data.

Memory device and operation method thereof

An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.

Image sensors with optimized control of transfer transistors and electronic apparatuses including the same

A printed circuit board includes a circuit layer and a ground layer disposed above the circuit layer. The ground layer includes ground layer sections each having metal members, arranged in parallel in one direction on a plane. Areas of the metal members of adjacent ground layer sections are different from each other. The areas of the metal members are determined based on respective areas of circuits of the circuit layer corresponding to respective ground layer sections.

Printed circuit board

Image sensors and electronic apparatuses including the same

A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

Semiconductor image sensors having channel stop regions and methods of fabricating the same

An image sensor includes multiple unit pixels defined by a pixel isolation layer on a substrate, at least a pair of photoelectric converters in each of the unit pixels and at least an optical divider on a rear surface of the substrate at each of the unit pixels. The photoelectric converters are separated by at least a converter separator in each of the unit pixels and generate photo electrons in response to an incident light that is incident to an incident point of the respective unit pixel. The optical divider is overlapped with the incident point and divides the incident light into a plurality of split lights having the same amount of light such that each of the photoelectric converters receives the same amount of light from the split lights.

Image sensor

Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

CMOS image sensors including vertical transistor

A unit pixel of an image sensor includes a charge generation unit, a signal generation unit, and a ground control transistor. The charge generation unit generates photo-charges in response to incident light and provides the photo-charges to a floating diffusion area in response to a transmission control signal. The signal generation unit generates an analog signal having a magnitude corresponding to an electrical potential of the floating diffusion area based on a reset control signal and a row selection signal. The ground control transistor is coupled between the floating diffusion area and a ground voltage, and is turned on in response to a ground control signal.

Unit pixel of image sensor, image sensor, and computing system having the same

A printed circuit board and a method of manufacturing the same is provided. The printed circuit board includes an insulating substrate, a circuit disposed on the insulating substrate, a pair of first reinforcements spatially separated in the insulating substrate, the first reinforcements extending parallel to a surface of the insulating substrate, and a second reinforcement configured to connect the pair of first reinforcements.

Printed circuit board and manufacturing method thereof

An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.

Image sensor and methods of manufacturing the same

An image sensor includes a row driver, a pixel array, an analog-to-digital converter, and an output compensating circuit. The row driver generates a photo-gate control signal, a storage control signal, a transfer control signal, a reset control signal and a row selecting signal. The pixel array includes a plurality of pixels, and each pixel uses a deep trench isolation (DTI) region as a photo gate. The pixel array receives optical signals, converts the optical signals to electric signals, and outputs the electric signals as image signals in response to the photo-gate control signal, the storage control signal, the transfer control signal, the reset control signal, and the row selecting signal. The analog-to-digital converter performs an analog-to-digital conversion on the image signals to generate first signals, and the output compensating circuit compensates the first signals.

Image sensor having pixels each with a deep trench isolation region as a photo gate for outputting image signals in response to control signals from a row driver and method of operating the image sensor

Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.

CMOS image sensors having a transfer gate electrode, and methods of fabricating CMOS image sensors having a transfer gate electrode

An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

Image sensors having reduced interference between pixels

Growing community of inventors

Suwon-si, South Korea

Kyung-ho Lee