Electronics and Telecommunications Research Institute

Korea Research Institute of Bioscience and Biotechnology

Kyung Ho Lee

Hyung Sup Yoon

Jong Min Lee

Dong Min Kang

Seong Il Kim

Byoung Gue Min

Ju Yeon Hong

Eun Soo Nam

Hae Cheon Kim

Ho Kyun Ahn

Jong Won Lim

Chull Won Ju

Yong Hwan Kwon

Hee Gu Lee

Kyu Jun Cho

Zin Sig Kim

Bo Yeon Kim

Jong Seog Ahn

Jae-Hyuk Jang

Nak Kyun Soung

Joonsung Hwang

In Ja Ryoo

Chul Won Ju

Hyunjoo Cha

Mija Ahn

Srinivasrao Ganipisetti

Sung-Kyun Ko

Jae Yeob Shim

Jae Yoeb Shim

Young Il Kang

Jiyun Mun

The present invention relates to a composition for preventing, alleviating or treating inflammatory diseases, comprising, as an active ingredient, an acylhydrazone derivative compound, a stereoisomer thereof or a pharmaceutically acceptable salt thereof. an acylhydrazone derivative compound, a stereoisomer thereof or a pharmaceutically acceptable salt thereof, of the present invention, effectively inhibits inflammatory cytokines and inflammatory signaling pathways, thereby effectively alleviating symptoms of inflammatory diseases such as dermatitis. Therefore, the composition according to the present invention may be effectively used for the prevention, alleviation or treatment of inflammatory diseases.

Anti-inflammatory composition comprising acylhydrazone derivative

Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.

Semiconductor device and fabrication method thereof

A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

Method of fabricating T-gate

Provided are a chip, a chip stack, and a method of manufacturing the same. A plurality of chips which each include: at least one pad formed on a wafer; and a metal layer which protrudes up to a predetermined thickness from the bottom of the wafer and is formed in a via hole exposing the bottom of the pad are stacked such that the pad and the metal layer of adjacent chips are bonded. This leads to a simplified manufacturing process, high chip performance and a small footprint for a chip stack.

Method of manufacturing a chip

Provided is a method of fabricating a heterojunction bipolar transistor (HBT). The method includes: sequentially depositing a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter capping layer on a substrate; forming an emitter electrode on the emitter capping layer; forming a mesa type emitter to expose the base layer by sequentially etching the emitter capping layer and the emitter layer using the emitter electrode as an etch mask in vertical and negative-sloped directions to the substrate, respectively; and forming a base electrode on the exposed base layer using the emitter electrode as a mask in self-alignment with the emitter electrode. In this method, a distance between the mesa type emitter and the base electrode can be minimized and reproducibly controlled. Also, a self-aligned device with an excellent high-frequency characteristic can be embodied.

Method of fabricating heterojunction bipolar transistor

Growing community of inventors

Daejeon, South Korea

Kyung Ho Lee