Samsung Display Co., Ltd.

Hynix Semiconductor Inc.

Samsung Displayco., Ltd.

Kyung Ho Hwang

Ji Tae Kim

Hyung Min Shin

Sung Un Park

Won Mo Lee

Jin Young You

Young Seob Kim

A display device includes a display panel including a display area including sub-pixels, a data driver providing a data voltage to each of the sub-pixels through a data line, a gate driver providing a bias gate signal to each of the sub-pixels and a driving controller compensating for the data voltage written in a second area to which the bias gate signal having an activation level in a first period in which the data voltage is written in the first area is applied based on a first data voltage corresponding to a grayscale of a first area of the display area and a second data voltage corresponding to a grayscale of a different area from the first area of the display area.

Display device and driving method thereof

An organic light emitting display device includes a gamma reference voltage setter to set a gamma reference voltage, a gamma reference voltage generator to generate a gamma reference voltage set by the gamma reference voltage setter, and a gamma voltage generator to generate a gamma voltage based on the gamma reference voltage. The gamma reference voltage setter sets the gamma reference voltage to a first temporary value, increases the first temporary value by a first delta value, searches a second temporary value at which luminance of the display panel is less than a preset value, and sets the gamma reference voltage based on the searched second temporary value.

Organic light emitting display device and method for setting gamma reference voltage thereof

A pixel includes a pixel circuit and a storage circuit. The pixel circuit provides a driving current corresponding to a data signal to an organic light emitting diode. The storage circuit provides the data signal to the pixel circuit. The storage circuit includes a storage capacitor to store the data signal and a control transistor to transmit a data signal supplied from a data output line to the storage capacitor when the control transistor is turned on.

Pixel and organic light emitting display device including the same

An organic light emitting display device includes pixel unit, a power supply, and a timing controller. The power supply supplies a driving voltage to the pixel unit. The timing controller divides the pixel unit into a plurality of regions, calculates color on-pixel ratio (C-OPR) values of the regions based on image data, and controls the power supply based on the C-OPR values of the regions.

Organic light emitting display device and method of driving the same

A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral circuit region, and an active region defined by a device isolation film, at least one dummy gate formed over the active region to expose a center part and both ends of the active region, a bit line contact plug formed between the dummy gates so as to be coupled to the center part of the active region, and a storage node contact plug that is spaced apart from the bit line contact plug by the dummy gate and is coupled to both ends of the active region. As a result, the problem that the storage node contact hole is not open in the semiconductor device can be solved, resulting in improved semiconductor device characteristics.

Semiconductor device having dummy pattern and method of fabricating a semiconductor device comprising dummy pattern

Provided are a semiconductor device, adapted to be capable of fabricating the device having improved resistance characteristic by decreasing dishing of solid phase epitaxy (SPE) silicon during planarization in a landing plug forming process via use of SPE silicon, and a method of manufacturing the same. The method of manufacturing a semiconductor device in accordance with the present invention comprises, forming a plurality of gates on a semiconductor substrate; forming an interlayer dielectric film thereon, such that the gates are embedded; selectively etching the interlayer dielectric film to open a landing plug-forming region; depositing SPE silicon, such that the opened landing plug-forming region in the interlayer dielectric film is embedded; implanting boron ions into the SPE silicon; and annealing the resulting boron ion-implanted structure.

Growing community of inventors

Yongin-si, South Korea

Kyung Ho Hwang