Seoul Viosys Co., Ltd.

Seoul Opto Device Co., Ltd.

Seoul Semiconductor Co., Ltd.

Kyung Hee Ye

Won Cheol Seo

Yeo Jin Yoon

Dae Sung Kal

Dae Sung Cho

Dae Won Kim

Kyoung Wan Kim

Chung Hoon Lee

Jong Hyeon Chae

So Ra Lee

Kwang Choong Kim

Ki Bum Nam

Chang Suk Han

Seung Kyu Choi

Kyung Hae Kim

Nam Yoon Kim

Ju Hyung Yoon

Kwang Joong Kim

Joon Hee Lee

Chang Youn Kim

Jin Cheol Shin

Jong Kyun You

Young Eun Yang

Hong Chol Lim

Sum Geun Lee

Joo Woong Lee

Noriaki Yagi

Eun Ju Kim

Masahiko Yamakawa

Hyuck Jung Choi

Hyun Gu Kang

Ryoji Tsuda

Kumpei Kobayashi

Hong Jae Yoo

Kiyoshi Inoue

Won Cheol Seol

A white light source and method of use thereof, wherein control of daily rhythm and pleasant lighting can be realized. Amounts of stimulation light emitted from a white light source to the intrinsically photosensitive retinal ganglion cells (ipRGCs) and visual cells of the L cone and M cone, are defined as a melanopic irradiance, an L-cone opic irradiance, and an M-cone opic irradiance, respectively; a ratio of the amounts of the stimulation light is expressed by formula (1); and A is the ratio corresponding to the emission spectrum of the white light source, and B is the ratio corresponding to the radiation spectrum of a black body having the same color temperature as the white light source, an amount of stimulation light emitted to the ipRGC is quantitatively changed by changing the emission intensity of the white light source satisfying formula (2).Melanopic irradiance/(-cone opic irradiance+-cone opic irradiance)  (1)0.88≤≤1.11  (2).

Method for using white light source, and white light source

Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Light emitting diode and method of fabricating the same

A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

Light emitting device

A light emitting device includes a first bonding pad configured to be mounted to a substrate, a first electrode electrically connected to the first bonding pad, a first conductive type semiconductor layer having a middle area disposed between two, opposing end areas, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer and connected to the first electrode; and a first contact portion and a plurality of second contact portions disposed on the first conductive type semiconductor layer, in which the first contact portion is disposed adjacent one end area of the first conductive type semiconductor layer, the second contact portions are disposed in the middle area of the first conductive type semiconductor layer, and the first bonding pad exposes at least one of the second contact portion.

A light emitting module having a lens is disclosed. The light emitting module includes: a substrate having recesses; light emitting elements mounted within the recesses of the substrate; and a lens which is coupled with the substrate and diffuses the light emitted from the light emitting elements. The light emitting module can have a slim structure by mounting the light emitting elements within the recesses formed in the substrate.

Light emitting module having lens

A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Light emitting diode having electrode pads

Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

High efficiency light emitting diode and method for fabricating the same

The present invention relates to an LED lamp. In the LED lamp, light may be emitted in lateral and rear directions as well as in a front direction to obtain light distribution characteristics similar to those of an incandescent lamp, and heat generated when the LED emits light may be effectively dissipated.

LED lamp

Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer.

Light emitting device having a plurality of light emitting cells

Growing community of inventors

Ansan-si, South Korea

Kyung Hee Ye