Samsung Electronics Co., Ltd.

Kyung-Hee Han

Ho-young Lee

Seung-hun Lee

Insu Choi

Sung-Joon Kim

Ilho Kim

Chang Ho Yun

Changho Yun

Kyungjin Park

Yunmi Hwang

Doo Hwan Oh

Jin Hun Jeong

Jinhun Jeong

Jinwoo Kim

You-Keun Han

Seung-Jin Seo

Seung-Man Shin

Jong-Geon Lee

Chaeeun Lee

Hui-chong Shin

Yukyoung Kim

Jongwon Jeong

Provided is an operating method of a storage device. The method includes providing temperature information of each of a plurality of volatile memory devices in the storage device to a host device; and receiving a setting command related to a refresh operation of the plurality of volatile memory devices from the host device, wherein the plurality of volatile memory devices are classified into groups based on temperature information, and wherein the setting command indicates a number of rows of the plurality of volatile memory devices to be refreshed differently for each of the groups based on the temperature information.

Memory device, storage module, host and operating methods for performing a refresh operation based on temperature information

A method for preparing error recovery of a memory device included in a memory system includes performing a training operation of the memory device upon power-on of the memory system, booting an operating system into a normal mode by operating the memory device using a selected operation frequency of a plurality of operation frequencies based on results of the training operation, detecting an error frequency among the plurality of operation frequencies in response to a change of the selected operation frequency of the memory device by the operating system, the error frequency being an operation frequency which causes at least one error in the memory device, and storing information regarding the detected error frequency in a first register included in a memory controller associated with the memory device.

Memory system including memory controller and memory device and method for recovering from an error thereof

Disclosed is an electronic device including a memory module that includes at least one dynamic random access memory, and a processor configured to access the memory module, determine a corrected error count associated with an address of a corrected error in response to the corrected error being detected when data are read from the memory module, read an error log associated with the corrected error, determine a risk level of the corrected error based on the error log, and schedule a post package repair (PPR) for the address of the corrected error in response to the risk level of the corrected error being high.

Electronic device managing corrected error and operating method of electronic device

Methods and apparatuses for entering at least one memory into a test mode are provided. At least one test MRS bit may be stored in a first register for controlling the memory. At least one test MRS code may be programmed into a second register. Each of the at least one bits stored in the first register may correspond one of the at least one test MRS codes stored in the second register.

Methods and apparatus for interfacing between test system and memory

Growing community of inventors

Gwangmyeong-si, South Korea

Kyung-Hee Han