Samsung Electronics Co., Ltd.

Kyung-han Ahn

Sang-mock Lee

Sung-woo Hwang

Kyu-hyoung Lee

Sang-il Kim

Young-min Kang

Sang-Il Kim

Tae-gon Kim

Soon-Jae Kwon

Young-jae Kang

Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.

Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the same

A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.

Soft magnetic exchange-coupled composite structure, and high-frequency device component, antenna module, and magnetoresistive device including the soft magnetic exchange-coupled composite structure

A method of preparing a boron-doped transition metal pnictide magnetocaloric material, the method including: contacting a transition metal halide; a pnictogen element, a pnictogen oxide, or a combination thereof; a boron-containing oxide; and a reducing metal to provide a mixture; and heat treating the mixture to prepare the boron-doped transition metal pnictide magnetocaloric material.

Method of preparing transition metal pnictide magnetocaloric material, transition metal pnictide magnetocaloric material, and device including the same

A thermoelectric material including: a thermoelectric matrix; and a plurality of metal nanoparticles disposed in the thermoelectric matrix, wherein a difference between a work function of thermoelectric matrix and a work function of a metal particle of the metal nanoparticles is about &#x2212;1.0 electron volt to about 1.0 electron volt.

Nano-complex thermoelectric material, and thermoelectric module and thermoelectric apparatus including the same

A thermoelectric material including: a thermoelectric matrix including grains with a composition of Formula 1:(BiSb)(TeSe)&#x2003;&#x2003;Formula 1wherein 1.8&#x2266;a&#x2266;2.2, 2.8&#x2266;b&#x2266;3.2, 0&#x2266;x&#x2266;1, and 0&#x2266;y&#x2266;1, and wherein a plurality of dislocations is present along a grain boundary between adjacent grains of the composition of Formula 1.

Thermoelectric material having reduced thermal conductivity, and thermoelectric device and module including the same

A thermoelectric material including a composition according to Chemical Formula 1:(BiSbM)(TeSe)&#x2003;&#x2003;Chemical Formula 1wherein M is an element of Group 13, 0&#x2266;a&#x2266;1, 0&#x3c;b&#x2266;0.004, 0&#x2266;x&#x2266;b, 0&#x2266;y&#x2266;b, x+y=b, 0&#x2266;c&#x2266;1, &#x2212;0.2&#x2266;i&#x2266;0.2, and &#x2212;0.2&#x2266;j&#x2266;0.2.

Growing community of inventors

Uijeongbu-si, South Korea

Kyung-han Ahn