Src Corporation

Kyung Eun Kim

Myung Hee Jung

Kang Hyung Kim

Chol Woo Park

Se Youn Hong

Su Beom Park

Kwan Sub Maeng

Byung Hee Hong

Se Woong Cha

Byung He Hong

Se Won Cha

The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially. Moreover, a method for producing graphene according to the present invention can form monolayer graphene by epitaxially growing graphene while increasing the growth rate of graphene.

Method of manufacturing graphene using metal catalyst

Growing community of inventors

Incheon, South Korea

Kyung Eun Kim