Industry-university Cooperation Foundation Hanyang University

Kyung Chul Ock

Seungmin Lee

Jonguk Bae

Jin Seong Park

Juheyuck Baeck

Ki Lim Han

Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)&#x2dc;2.6 at %.

Growing community of inventors

Anyang-si, South Korea

Kyung Chul Ock