Samsung Electronics Co., Ltd.

Seoul National University

Kyung-Bae Park

Sang Yoon Lee

Ji-Sim Jung

Jang-Yeon Kwon

Jong-Man Kim

Sang-Yoon Lee

Takashi Noguchi

Myung-Kwan Ryu

Sang-Myeon Han

Min-Koo Han

Bon Won Koo

Hyun-Suk Kim

Jong-Baek Seon

Kwang-Hee Lee

Kyung-Seok Son

Hyuck Lim

Jany-yeon Kwon

Sun-Jae Kim

Byung-wook Yoo

Kyung-yeup Kim

Tae-Sang Kim

Joon-Seok Park

Byung-Wook Yoo

Joong-hyun Park

Jung-seok Hahn

Kyoung-Seok Son

Eok-Su Kim

Wan-Joo Maeng

An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga&#x2014;In&#x2014;Zn Oxide, In&#x2014;Zn Oxide, In&#x2014;Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga&#x2014;In&#x2014;Zn Oxide, In&#x2014;Zn Oxide and In&#x2014;Sn Oxide.

Oxide semiconductor transistor and method of manufacturing the same

A thin film transistor ('TFT') includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Thin film transistor formed on flexible substrate and method of manufacturing the same

Provided are a driving device for a unit pixel of an organic light emitting display having an improved structure and a method of manufacturing the same.

Driving device for unit pixel of organic light emitting display and method of manufacturing the same

An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

Organic electro-luminescent display and method of fabricating the same

Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Thin film transistor and method of manufacturing the same

A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

Transistor, method of fabricating the same and organic light emitting display including the transistor

Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the polysilicon; forming a source and a drain region and a channel region interposed between the source and the drain regions in the polysilicon layer; injecting impurities having a first concentration using an ion beam implantation into one end and the other end of the polysilicon layer which are not covered by the mask structure. The ends of the polysilicon layer with the mask thereon is then subjected to ion bombardment to increase the level of impurities in the source and drain regions while at the same time shrinking the size of the masked regions.

Method of manufacturing thin film transistor having lightly doped drain regions

An organic electroluminescent display ('OELD') includes an organic light-emitting diode ('OLED'), a circuit region, and an interlayer dielectric (&#x201c;ILD&#x201d;) layer. The OLED is disposed in each of a plurality of pixels arranged on a substrate. The circuit region includes two or more thin film transistors (&#x201c;TFTs&#x201d;) and a storage capacitor. The ILD layer has two or more insulating layers and includes a first region disposed between both electrodes of the storage capacitor and a second region covering the TFTs. At least one of the insulating layers has a window exposing the insulating layer directly beneath the at least one insulating layer so that that the ILD layer is thinner in the first region than in the second region. Accordingly, it is possible to reduce an occupation area of the storage capacitor while maintaining the necessary capacitance of the storage capacitor and expanding the area of the luminescent region.

Organic electroluminescent display and method of fabricating the same

A method of degassing a thin layer and a method of manufacturing a silicon thin film includes applying microwaves to a silicon thin film deposited on a substrate to induce a resonance of impurities of H, Ar, He, Xe, O, and the like present in the silicon thin film so as to remove the impurities from the silicon thin film. A wavelength of the microwaves is equal to a natural frequency of an element of an object to be removed. According to a resonance of impurities induced by microwaves, the impurities can be very effectively removed from the silicon thin film so as to obtain a high quality silicon thin film. In particular, the microwaves are very suitable to be used in the manufacture of silicon thin films at low temperature.

Method of degassing thin layer and method of manufacturing silicon thin film

Provided are a method of manufacturing a laterally crystallized semiconductor layer and a method of manufacturing a thin film transistor (TFT) using the method. The method of manufacturing the laterally crystallized semiconductor layer comprises: forming a semiconductor layer on a substrate; irradiating laser beams on the semiconductor layer; splitting the laser beams using a prism sheet comprising an array of a plurality of prisms, advancing the laser beams toward the semiconductor layer to alternately form first and second areas in the semiconductor layer so as to fully melt the first areas, wherein the laser beams are irradiated onto the first areas, and the laser beams are not irradiated onto the second areas; and inducing the first areas to be laterally crystallized using the second areas as seeds.

Method of manufacturing laterally crystallized semiconductor layer and method of manufacturing thin film transistor using the same method

Provided is a method of manufacturing a driving-device for a unit pixel of an organic light emitting display having an improved manufacturing process in which the driving device can be manufactured with a smaller number of processes and in simpler processes. The method includes: forming an amorphous silicon layer including a first amorphous region and a second amorphous region disposed on the same plane of a substrate; forming an SAM (self-assembled monolayer) having a hydrophobic property on the first amorphous region; coating an aqueous solution in which nickel particles are dispersed, on the second amorphous region and the SAM, wherein a larger amount of nickel particles than on the SAM are dispersed on the second amorphous region using a hydrophilicity difference between the second amorphous region and the SAM; vaporizing the SAM through an annealing process and simultaneously performing metal induced crystallization in which the nanoparticles are used as a medium, to crystallize the first and second amorphous regions and to form first and second crystallization regions; patterning the first and second crystallization regions to form first and second channel regions; and forming first and second electrodes on the first and second channel regions.

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Yongin-si, South Korea

Kyung-Bae Park