Samsung Electronics Co., Ltd.

Other

Eugene Technology Co., Ltd.

Imperial Innovations Limited

Shinshu University

University of the Ryukyus

Kyung Bae Park

Yong Wan Jin

Chul Joon Heo

Sung Young Yun

Kwang Hee Lee

Gae Hwang Lee

Dong-Seok Leem

Seon-Jeong Lim

Takkyun Ro

Kyu Sik Kim

Sung Jun Park

Taejin Choi

Moon Gyu Han

Yeong Suk Choi

Feifei Fang

Tadao Yagi

Chui Joon Heo

Youn Hee Lim

Ryuichi Satoh

Chul Baik

Jisoo Shin

Hye Rim Hong

Dongseon Lee

Ji Soo Shin

Kiyohiko Tsutsumi

Jeong Il Park

Xavier Bulliard

Hyeongju Kim

Deukseok Chung

Norihito Ishii

Katsunori Shibata

Chuljoon Heo

Seon Jeong Lim

Kyung Ho Lee

Sangyoon Lee

Jung Woo Kim

Jin Ho Seo

Hyesung Choi

Ohkyu Kwon

Yun Kyung Kim

Kwang-hee Lee

Sung Heo

Sang Mo Kim

Hirosige Goto

Kyu Hyun Choi

Sang Chul Sul

Yong Ki Kim

Jae Woo Kim

Sung Tae Je

Seok-Hwan Hong

Jun Tae Kim

Naotoshi Suganuma

Kyo Jin Choo

Satoh Ryuichi

Jong Won Choi

Hyeong-Ju Kim

Kyusik Kim

Chil Hee Chung

Chul-Joon Heo

Sakurai Rie

Cha Young Yoo

Daiki Minami

Dong Seok Leem

Ja Dae Ku

Bong Ju Jung

Sungdong Suh

Hwijoung Seo

Eun Kyung Lee

Takashi Okazaki

Sung Han Kim

Wenxu Xianyu

Do Hwan Kim

Martin Heeney

Yongsung Kim

Woong Il Choi

Mineki Taoka

Musubu Ichikawa

Don-Wook Lee

Hiromasa Shibuya

Hyun Bum Kang

Eunae Cho

Jeoungin Yi

Takao Motoyama

Gyeongsu Park

Yongsu Kim

Dongjin Yun

Toshiki Takeuchi

Joo Ho Lee

Yeon-Hee Kim

Seong Heon Kim

Chui Baik

Yagi Tadao

Tae Hwa Hong

Woon Tahk Sung

Ji-Seon Kim

Su Ryong Jeong

Yeong Seong Yoon

Se Hyuck Park

Yong-Young Park

Brett Baatz

An imaging device includes a photoelectric conversion device including a sequential stack of an anode, a hole transport buffer layer, a photoelectric conversion layer, an electron transport buffer layer, and a cathode. The photoelectric conversion layer includes a p-type organic semiconductor and an n-type organic semiconductor. The electron transport buffer layer includes a compound represented by General Formula (1), and the p-type organic semiconductor includes a compound represented by General Formula (2): In General Formulas (1) and (2), Ar, Rto R, Ar, Rto R, Arand Ar, and Gand Gare as defined in the specification.

Imaging devices and imaging apparatuses

An organic photodiode includes a first electrode including a reflective layer, a second electrode including a semi-transmissive layer, a photoelectric conversion layer between the first electrode and the second electrode and including an organic light absorbing material, and a buffer layer that is at least one of between the reflective layer and the photoelectric conversion layer or between the semi-transmissive layer and the photoelectric conversion layer. The organic photodiode is configured to exhibit at least three external quantum efficiency (EQE) spectra in a wavelength region of about 380 nm to about 3000 nm and each EQE spectrum of the at least three EQE spectra has a full width at half maximum of about 2 nm to about 100 nm.

Organic photodiode, sensor, camera, and electronic device

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Compound and photoelectric device, image sensor, and electronic device including the same

An image sensor includes first and second organic photoelectric conversion devices stacked in a vertical direction and configured to selectively absorb light in a part of visible wavelength spectrum and non-selectively absorb light in the visible wavelength spectrum, respectively. The first organic photoelectric conversion device may selectively absorb light in a blue wavelength spectrum, and the second organic photoelectric conversion device may selectively absorb light in a green wavelength spectrum. The image sensor may have stacked organic photoelectric conversion devices configured to selectively absorb light in a red wavelength spectrum and a green wavelength spectrum, respectively.

Image sensors and image processing apparatus and electronic devices

A compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel including the compound, and an electronic device including the compound. In Chemical Formula 1, X, X, X, Ar, L, A, R, and Rare the same as in the specification.

Compound and sensor and sensor embedded display panel and electronic device

An imaging sensor includes a photoelectric conversion element, and a plurality of transistors connected to the photoelectric conversion element. The plurality of transistors are configured to transmit charges generated by the photoelectric conversion element. The plurality of transistors includes at least one transistor that includes a silicon semiconductor layer and at least one other transistor that includes an oxide semiconductor layer.

Imaging sensor and display device including the same

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and/or an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.

Sensor embedded display panel and electronic device

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a light absorption sensor on the substrate and including a light absorbing layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate. The light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or any combination thereof. The light emitting layer includes a first organic material and the light absorbing layer includes a second organic material. A difference between respective sublimation temperatures of the first and second organic materials is less than or equal to about 150° C., wherein each sublimation temperature is a temperature at which a weight reduction of 10% relative to the initial weight occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.

Sensor-embedded display panel and electronic device

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

Disclosed are a photoelectric conversion device includes a first electrode and a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and an organic buffer layer between the first electrode and the photoelectric conversion layer, the organic buffer layer including an organic buffer material, wherein a difference between a LUMO energy level of the organic buffer material and a LUMO energy level of the n-type semiconductor is greater than or equal to about 1.2 eV and the organic buffer material includes at least three carbazole moieties, and a sensor, and an electronic device including the same.

Photoelectric conversion device and sensor and electronic device

Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.

Photoelectric devices having charge transport layer including first charge transport material and second charge transport material and sensors and electronic devices

A composition for a photoelectric device includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound, and an image sensor and an electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Composition for photoelectric device, and image sensor and electronic device including the same

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Hwaseong-si, South Korea

Kyung Bae Park