Hrl Laboratories, LLC

USA As Represented by Secretary of the Navy

California Institute of Technology

United States of America As Represented by the Administrator of Nasa

Kyung-Ah Son

Jeong-sun Moon

Hwa Chang Seo

Ryan G Quarfoth

Richard Michael Kremer

James H Schaffner

Hyok Jae Song

Tahir Hussain

Jack A Crowell

Joshua M Doria

Mariano J Taboada

Zhiwei A Xu

Jongchan Kang

Brian N Limketkai

Nicholas Prokopuk

Jeong-Sun Moon

Kangmu Lee

Terry B Welch

Baohua Yang

Danny Wong

Peter David Brewer

David H Chow

Hasan Sharifi

Joseph S Colburn

Pamela R Patterson

Goutam Chattopadhyay

Joseph F Jensen

Wah S Wong

David Z Ting

Hanseung Lee

Harris P Moyer

Dana C Wheeler

Anna Liao

JeongSun Moon

A device having: a multilayer composite phase change material structure with: a bottom PCM layer of a first SbTe PCM material having a first metallic doping; a first composite PCM layer on the bottom PCM layer, wherein the first composite PCM layer comprises at least: a first composite layer, comprising said first PCM material having a second metallic doping; and a second composite layer, comprising said first SbTe PCM material undoped, on the first composite layer; and a top PCM layer, comprising first SbTe PCM material having said first metallic doping, on the composite PCM layer. The first metallic doping can be identical to the second metallic doping. The first PCM material can comprise SbTe and the first and second metallic dopings can comprise one of Ge, In and GeIn.

Reconfigurable devices with multi-layer composite phase change materials

Electrically tunable millimeter wave resonators and methods for fabricating and operating the same are disclosed. Embodiments include tunable millimeter wave resonators utilizing rare-earth nickelates, such as samarium nickelate. Embodiments tune the resonating member to frequencies between 30 and 100 GHz by varying the electric field across a resonating member. Further embodiments include a resonating member mounted to (and optionally embedded in) a substrate with conductive material connected to the resonating member and the substrate, and the total thickness can be 0.2 millimeters or less, or 0.1 millimeters or less. Additional embodiments include resonating members with a maximum dimension of 0.3 millimeters. Some embodiments include a gap between the conductive material contacting the substrate and the conductive material contacting the resonating member. Additional embodiments include resonating members with a loss tangent of less than 0.001, a dielectric constant of at least 100, and/or a quality factor greater than 500.

Millimeter wave resonator apparatuses and methods

A high-resistivity N-doped ruthenium oxide thin film is formed on a substrate by flowing argon and nitrogen gases in a sputter chamber that includes a preconditioned ruthenium oxide sputter target. The method includes forming a plasma and sputter depositing a high-resistivity N-doped ruthenium oxide thin film with a N/Ru atomic ratio between 0.5 and 3.0 and resistivity greater than 0.01 Ω cm on the substrate in the substrate. A high-resistivity H-doped ruthenium oxide thin film is formed on a substrate by first forming an oxygen-rich ruthenium oxide thin film, followed by a hydrogen anneal. A temperature sensor structure includes a high-resistivity ruthenium oxide thin film that is doped with nitrogen or hydrogen and has a resistivity between 0.01 and 1 Ω cm.

High-resistivity ruthenium oxide thin film fabrication and temperature sensor structure with high-resistivity ruthenium oxide thin film

A reconfigurable optical frequency selective structure having embedded therein:

Electrically-reconfigurable optical device structures with phase change materials

A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (≥450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.). If an anneal is applied in a hydrogen environment that will cause hydrogenation of the PCMO film which yields PCMO films with an extremely small optical loss (i.e., optical extinction coefficient k<0.001) over the entire IR range.

Method for growing crystalline optical films on Si substrates which may optionally have an extremely small optical loss in the infra-red spectrum with hydrogenation of the crystalline optical films

An electric field-controlled refractive index tunable device includes a phase change correlated transition metal oxide layer, and E-field responsive charge dopants. The E-field responsive charge dopants either accumulate in the phase change correlated transition metal oxide layer or are depleted from the phase change correlated transition metal oxide layer in response to an E-field applied to the phase change correlated transition metal oxide layer.

Electric field-tunable IR devices with very large modulation of refractive index and methods to fabricate them

A solid state optical beam steering device including a body of electro-optical material wherein the body of electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein the body has a first face and a second face opposite the first face, a first transparent resistive sheet on the first face of the body of electro optic material, wherein the first transparent resistive sheet has a first side and a second side, and a transparent conductor on the second face of the body of electro optic material, wherein the transparent conductor is coupled to the second side of the first transparent resistive sheet.

Solid-state tip-tilt-phased array

A method of providing a spatial light modulator comprising: providing a substrate; providing a first phase change material cell on the substrate, the first phase change material cell comprising: a first electrical heater on the substrate; a first optical reflector layer on the electrical heater; and a first phase change material layer on the optical reflector layer; and providing at least a second phase change material cell on the substrate, the second phase change material cell comprising: a second electrical heater on the substrate; a second optical reflector layer on the second electrical heater; a second phase change material layer on the second optical reflector layer; and providing a light absorber layer between the first phase change material cell and the second phase change material cell.

Spatial light modulator using phase-change materials with improved fill factor

A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (&#x2265;450&#xb0; C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (&#x3c;50&#xb0; C.). If an anneal is applied in a hydrogen environment that will cause hydrogenation of the PCMO film which yields PCMO films with an extremely small optical loss (i.e., optical extinction coefficient k&#x3c;0.001) over the entire IR range.

A field effect transistor includes a substrate, a passivation layer on the substrate forming a passivated substrate, wherein the passivation layer is inert to XeF, and a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate.

Graphene LHFETS (lateral heterostructure field effect transistors) on SI compatible with CMOS BEOL process

A solid state electrically variable focal length lens includes a plurality of concentric rings of electro-optical material, wherein the electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein each respective concentric ring further includes a transparent resistive sheet on a first face of the respective concentric ring, wherein the transparent resistive sheet extends along the first face, and a first voltage coupled between a first end and a second end of the transparent resistive sheet, wherein the first voltage may be varied to select an optical beam deflection angle.

Solid state electrically variable-focal length lens

A spatial light modulator includes a substrate, a phase change material cell on the substrate, the phase change material cell including an electrical heater on the substrate, an optical reflector layer on the electrical heater, and a phase change material layer on the optical reflector layer.

Spatial light modulator using phase-change matertals with improved fill factor

An optical apparatus may comprise: an electrically reconfigurable optical layer comprising at least one phase-change material, wherein an optical property of the phase-change material is reconfigurable by an electric field; an optically transparent top electrode and a bottom electrode, the top and bottom electrodes configured to apply the electric field to the electrically reconfigurable optical layer, wherein the electrically reconfigurable optical layer is disposed between the optically transparent top electrode and the bottom electrode; and a colossal-K dielectric layer disposed between the electrically reconfigurable optical layer and the bottom electrode. The phase-change material of the electrically reconfigurable optical layer may comprise phase-change nickelate or tungsten oxide. The phase-change material of the electrically reconfigurable optical layer may have a perovskite structure. The phase-change nickelate or tungsten oxide may enable to actuate large refractive index changes of more than 1 in infrared wavelength spectrums at high speeds of phase reconfiguration of more than 1 kHz by applying the electric field to the phase-change material.

Electrically reconfigurable optical apparatus using electric field

A device including a biopolymer membrane, a passivation layer on the biopolymer membrane, a graphene layer on the passivation layer, a source electrode on the graphene layer, and a drain electrode on the graphene layer, wherein the graphene layer extends between the source electrode and the drain electrode.

Graphene transistors on microbial cellulose

A neuroelectric sensor and stimulator system includes a first antenna, a reader coupled to the first antenna for transmitting stimulation controls and power to a second antenna, and for receiving sensor data transmitted from the second antenna via the first antenna, and at least one neuroelectric sensor stimulator array including the second antenna, a rectifier coupled to the second antenna for extracting power transmitted from the first antenna, a controller coupled to the second antenna for decoding controls transmitted from the first antenna to the second antenna for the neuroelectric sensor stimulator array, a plurality of sensors, a multiplexer coupled to the controller and to the plurality of sensors for selecting a single sensor, and a plurality of stimulators coupled to the controller for stimulating neurons, wherein the rectifier, the controller, the plurality of sensors, the multiplexer, and the plurality of stimulators include graphene.

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Moorpark, CA, United States of America

Kyung-Ah Son