Samsung Electronics Co., Ltd.

Skhynix Inc.

Kyumin Lee

Sangjin Hyun

Jooyoung Lee

Changhan Kim

Yoon Tae Hwang

Moonkyun Song

Soojung Choi

Sungkwan Hong

An operation method of a memory system may include monitoring the size of a programmable area included in each of a plurality of open blocks in which a plurality of data having different attributes are stored, respectively, and generating a first free block by performing a first erase operation on a part of a plurality of erase target blocks based on the number of first open blocks, each open block of which the programmable area has a size less than a threshold value, among the plurality of open blocks.

Apparatus and method for managing program operation time and write latency in memory system

A method of fabricating a semiconductor device includes forming first and second gate dielectric layers on first and second regions of a semiconductor substrate, respectively, forming a first metal-containing layer on the first and second gate dielectric layers, performing a first annealing process with respect to the first metal-containing layer, removing the first metal-containing layer from the first region, forming a second metal-containing layer on an entire surface of the semiconductor substrate, performing a second annealing process with respect to the second metal-containing layer, forming a gate electrode layer on the second metal-containing layer, and partially removing the gate electrode layer, the second metal-containing layer, the first metal-containing layer, the first gate dielectric layer, and the second gate dielectric layer to form first and second gate patterns on the first and second regions, respectively.

Methods of fabricating semiconductor devices

Growing community of inventors

Seoul, South Korea

Kyumin Lee