Asm IP Holding B.v.

KyuMin Kim

YoungMin Kim

Sungbae Kim

SeungHwan Lee

HakYong Kwon

KiKang Kim

JongHyun Ahn

SungKyu Kang

HieChul Kim

SeongRyeong Kim

This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

Method for filling a gap in a three-dimensional structure on a semiconductor substrate

Growing community of inventors

Anyang-si, South Korea

KyuMin Kim