Samsung Electronics Co., Ltd.

Cornell University

Kyuho Cho

Young-Lim Park

Sunmin Moon

Hanjin Lim

Sangyeol Kang

Eunsun Kim

Suhwan Kim

Wandon Kim

Jong-Bom Seo

Hyosik Mun

Ohseong Kwon

Joohyun Jeon

Jin Yong Kim

Jooho Lee

Yongsung Kim

Woojin Lee

Beom Seok Kim

Younsoo Kim

Changseung Lee

Kiyoung Lee

Yong-Suk Tak

Kyooho Jung

Jong Cheol Lee

Jaehyoung Choi

Jaesoon Lim

Darrell G Schlom

Myoungho Jeong

Jaewan Chang

Beomseok Kim

Jaejin Kim

Jonghun Kim

Hocheol Lee

Craig J Fennie

Natalie M Dawley

Gerhard H Olsen

Zhe Wang

Junseok Hong

Sangig Rho

Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

Semiconductor device including capacitor

A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (ABX). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

Thin-film structure and method of manufacturing the same

Semiconductor device

A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.

Semiconductor device and method of manufacturing the same

A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device

A URL search apparatus is configured to perform a method for URL address search in a URL list. The URL search apparatus maintains a URL list, and the method for Uniform Resource Locator (URL) address search includes receiving a connection request containing URL address information from a user; identifying tables that are generated according to characters constituting URL address information in the URL list and lengths of character strings serving as URL address information in the URL list; and performing a URL search by checking whether the URL address information contained in the connection request is present in the URL list on the basis of the identified tables.

Method and apparatus for URL address search in URL list

The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.

Semiconductor devices

A method of manufacturing a capacitor of a semiconductor device includes forming a high-k dielectric pattern on a semiconductor substrate, the high-k dielectric pattern having a pillar shape including a hole therein, forming a lower electrode in the hole of the high-k dielectric pattern, locally forming a blocking insulating pattern on an upper surface of the lower electrode, and forming an upper electrode covering the high-k dielectric pattern and the blocking insulating pattern.

Method for manufacturing capacitor of semiconductor device and capacitor of semiconductor device manufactured thereby

A semiconductor device includes a substrate and a doped hafnium oxide layer disposed on the substrate, the doped hafnium oxide layer including a hafnium oxide layer doped with doping atoms and having tetragonal unit lattices, an ion size of the doping atom being greater than an ion size of a hafnium atom.

Semiconductor devices including a dielectric layer

Growing community of inventors

Seoul, South Korea

Kyuho Cho