Samsung Electronics Co., Ltd.

Seoul National University

Kyuha Chung

Mun-Pyo Hong

Wan-Shick Hong

Chong-Chul Chai

Joon-Chul Goh

Joon-Hoo Choi

Jung-Ho Lee

Woon-Yong Park

Sung-Hoon Yang

Beohm-Rock Choi

Nam-Seok Roh

Yong-Uk Lee

Young-Mi Tak

Mun-pyo Hong

Nam-Deog Kim

Jong-In Hong

Byung-Keun Hwang

Do-Yeung Yoon

Glenn Allen Cerny

Kunjal Parikh

Gia Kim

A display device and a method of driving the same, win which the display device includes a light emitting element and a driving transistor supplying a driving current to the light emitting element, and in which one of a data voltage or a reverse bias voltage is applied to the driving transistor in an alternating manner, and the reverse bias voltage is an AC voltage.

Display device and driving method thereof

An insulating film according to an embodiment of the present invention has Chemical Formula 1  

Organic insulator, organic thin film transistor array panel including organic insulator, and manufacturing method therefor

Pixels of red, blue and green are sequentially arranged in the row direction. The red and green pixels are alternately arranged in the column while the blue pixels being arranged between the neighboring red and each blue pixel is surrounded by the four red and green pixels. Gate lines are arranged at respective pixel rows. Data lines cross over the gate lines in an insulating manner and are arranged at the respective pixel columns. Pixel electrodes and thin film transistor are arranged at the respective pixels. At a predetermined pixel unit, the data lines to the two blue pixel are connected to each other. The pixel electrodes are overlapped with the gate lines or data lines via a passivation layer of low dielectric organic material or insulating material such as SiOC, SiOF.

Thin film transistor array for a liquid crystal display having a data line cross-connection

The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

Deposition method of insulating layers having low dielectric constant of semiconductor devices

The present invention relates to a method of forming a pattern on a substrate and a method of manufacturing a liquid crystal display panel using the same. In order to decrease stitch defect, the shot boundary lines for respective layers of patterns do not overlap each other to be dispersed. Specifically, according to a method of forming patterns of the present invention, after a first material layer is first formed on a substrate, a first pattern is formed by performing a first photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the first material layer. Subsequently, after a second material layer is formed on the first pattern, a second pattern is formed by performing a second photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the second material layer. The shot boundary line in the second photo etching is spaced apart from the shot boundary line in the first photo etching. A liquid crystal display panel is manufactured by using this forming method.

Method for forming pattern on substrate and method for fabricating liquid crystal display using the same

Growing community of inventors

Seoul, South Korea

Kyuha Chung