Micron Technology Incorporated

Kyuchul Chong

Irina V Vasilyeva

Kyle B Campbell

Vishwanath Bhat

Farrell Martin Good

Hyun Sik Kim

A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

Methods of forming devices including multi-portion liners

Devices including multi-portion liners

Methods of forming semiconductor structures including multi-portion liners

Semiconductor structures including multi-portion liners

Some embodiments include methods of forming structures. Spaced-apart features are formed which contain temperature-sensitive material. Liners are formed along sidewalls of the features under conditions which do not expose the temperature-sensitive material to a temperature exceeding 300&#xb0; C. The liners extend along the temperature-sensitive material and narrow gaps between the spaced-apart features. The narrowed gaps are filled with flowable material which is cured under conditions that do not expose the temperature-sensitive material to a temperature exceeding 300&#xb0; C. In some embodiments, the features contain memory cell regions over select device regions. The memory cell regions include first chalcogenide and the select device regions include second chalcogenide. The liners extend along and directly against the first and second chalcogenides.

Methods of forming structures

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Boise, ID, United States of America

Kyuchul Chong