Samsung Electronics Co., Ltd.

Snu Rdb Foundation

Shinshu University

Kyu Sik Kim

Kyung Bae Park

Kwang Hee Lee

Dong-Seok Leem

Yong Wan Jin

Seon-Jeong Lim

Gae Hwang Lee

Satoh Ryuichi

Ryuichi Satoh

Deukseok Chung

Seon Jeong Lim

Kyung Ho Lee

Jung Woo Kim

Chul Joon Heo

Dae-Ho Kim

Jin Ho Seo

Takkyun Ro

Yun Kyung Kim

Musubu Ichikawa

Sung Heo

Hirosige Goto

Sang Chul Sul

Jang-Joo Kim

Kyo Jin Choo

Dongjin Yun

Dong Seok Leem

Seong Heon Kim

Sung Young Yun

Jae Young Choi

Hong-seok Lee

Moon Gyu Han

Wenxu Xianyu

Do Hwan Kim

Yongsung Kim

Woong Il Choi

Kwang-hee Lee

Eunae Cho

Gyeongsu Park

Yongsu Kim

Toshiki Takeuchi

Hyung-Ik Lee

Yusuke Higashi

Jang Woo You

Yong Hwa Park

Nam Jeong Kim

Yong-Young Park

Gi Eun Lee

A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

Photodiode

An optical imaging system for a three-dimensional image acquisition apparatus includes an object lens which focuses light, a first image sensor which senses light in a visible light band of the light focused by the object lens, and a second image sensor which senses light in an infrared ray band of light transmitted through the first image sensor. A three-dimensional image acquisition apparatus includes the optical imaging system for a three-dimensional image acquisition apparatus.

Optical imaging system for 3D image acquisition apparatus and 3D image acquisition apparatus including the optical imaging system

Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device.

Photoelectronic device and image sensor

Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.

Organic photoelectronic device and image sensor including selective light transmittance layer

Disclosed are an organic photoelectronic device including a first electrode and a second electrode facing each other and an active layer interposed between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound represented by the formula CR&#x2014;RONand an n-type semiconductor compound having a maximum absorption peak at a wavelength region of about 500 nm to about 600 nm, and an image sensor including the organic photoelectronic device.

Organic photoelectronic device and image sensor

According to example embodiments, a photoelectric conversion device includes a first electrode including a light-receiving surface, a second electrode spaced apart from the first electrode and facing the first electrode, and an auxiliary layer between the second electrode and an exciton producing layer. The first electrode may be on the second electrode. The exciton producing layer may be between the first electrode and the second electrode. The exciton producing layer may be spaced apart from the second electrode by a distance corresponding to one of a crest and a trough of a standing wave of light to be converted into electricity.

Photoelectric conversion device

An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.

Image sensor and electronic device including the same

A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.

Sputtering apparatus and method thereof

An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiN, 0&#x3c;x&#x3c;1), silicon oxynitride (SiON, 0&#x3c;y&#x3c;0.5, 0&#x3c;z&#x3c;1), and a combination thereof.

Optoelectronic device, and image sensor and electronic device including the same

Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color photo-sensing photoelectric conversion device, a first photodiode and a second photodiode disposed under the first color filter and the second color filter, respectively, a first light guide member disposed between the first color filter and the first photodiode, and a second light guide member disposed between the second color filter and the second photodiode.

Image sensors having light guide members

An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

A printed circuit board (PCB) having an improved waterproof structure for preventing corrosion of a substrate is disclosed. A plurality of screen-printed protrusions is provided at the PCB surface. The plurality of protrusions allow water to be formed in waterdrops so that the waterdrops can flow to the outside of the PCB. The PCB is arranged to have a tilted structure for facilitating discharge of the water. The tilted structure discharges waterdrops to a lower side of the PCB. The PCB and a PCB assembly having the same are applicable to electronic appliances such as a washing machine.

Printed circuit board (PCB), PCB assembly, and washing machine including the same

Growing community of inventors

Yongin-si, South Korea

Kyu Sik Kim