Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Kyu-Sik Cho

Joon-Hoo Choi

Sang-Ho Moon

Yong-Hwan Park

Bo-Kyung Choi

Byoung-Kwon Choo

Tae-Hoon Yang

Won-Kyu Lee

Min-Chul Shin

Yun-Gyu Lee

Sun Young Park

Yul-Kyu Lee

Byoung-Seong Jeong

Won-Kyu Kwak

Jong-Hyun Park

Kiwook Kim

Kwangmin Kim

Jong-Moo Huh

Changkyu Jin

Sungho Cho

Kyongtae Park

Donghoon Jeong

Ji-Hoon Song

Hyesong Kwun

Dae-won Lee

JoongSoo Moon

Chun-Gi You

Jong-Hyun Choi

Kyong-Tae Park

Joongsoo Moon

Seung-Kyu Park

Byoung-June Kim

Sung-Hoon Lim

Woogeun Lee

Kangnam Kim

Min-Ji Baek

Jin-A Lee

Kunal Girotra

Dong-Rock Seo

Chung-Gi You

Joo-Hoo Choi

Junhong Na

Kyontae Park

Hyesong Kwon

A gate driving circuit includes a plurality of unit stages connected to each other, wherein each of the plurality of unit stages includes a first transistor having a lower gate electrode, an upper gate electrode disposed on the lower gate electrode, an active layer disposed between the lower gate electrode and the upper gate electrode, a first electrode contacting a first portion of the active layer, and a second electrode contacting a second portion of the active layer, a first capacitor defined by a first region in which the lower gate electrode and the upper gate electrode overlap, and a second capacitor defined by a second region in which the upper gate electrode and the first electrode overlap, wherein the upper gate electrode and the lower gate electrode are electrically coupled to each other in the first region where the upper gate electrode and the lower gate electrode overlap to form the first capacitor.

Gate driving circuit and display device including the same

A display apparatus includes a substrate including a display region and a non-display region, a display element layer, a pad group, a touch electrode layer, and a touch insulating layer. The display element layer includes display elements provided in the display region in a plan view. The pad group may include output pads provided on substrate and provided in the non-display region in the plan view. The touch electrode layer is provided on the display element layer. The touch insulating layer is provided on the display element layer and contacts the touch electrode layer. An intaglio pattern is provided in the touch insulating layer overlapped with the non-display region, and the intaglio pattern is not overlapped with the pad group.

Display apparatus

A pixel of an organic light emitting diode display device includes a scan transistor configured to connect a data line to a first node in response to a scan signal, a storage capacitor connected between the first node and a first power supply voltage, a compensation capacitor connected between the first node and a second node, a driving transistor having a gate connected to the second node, a source connected to the first power supply voltage, and a drain connected to a third node, a compensation transistor configured to connect the second node to the third node in response to a compensation control signal, an organic light emitting diode connected between the third node and a second power supply voltage, and an initialization transistor configured to transfer an initialization voltage in response to an initialization control signal.

Pixel of an organic light emitting diode display device and organic light emitting diode display device

A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.

Method of manufacturing a dual-gate thin film transistor

An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

Organic light emitting diode display

An organic light-emitting display (OLED) device is provided. The OLED device includes: a substrate of which a pixel region is defined; a light-condensing means disposed on the pixel region of the substrate; a lower electrode disposed on the light-condensing means; an organic layer, which is disposed on the lower electrode and includes an organic light-emitting layer; and an upper electrode disposed on the organic layer. A method for manufacturing such an OLED device is also provided.

Organic light-emitting display device and method of manufacturing the same

Thin film transistor, display apparatus including the thin film transistor, and method of manufacturing the thin film transistor

An organic light-emitting display apparatus includes: a substrate; a thin film transistor (TFT) on the substrate and including an active layer, a gate electrode overlapping a gate region of the active layer, a source electrode overlapping a source region of the active layer, and a drain electrode overlapping a drain region of the active layer; a first electrode electrically connected to one of the source electrode or the drain electrode; a first dummy conductive pattern overlapping a dummy region of the active layer between the gate region and one of the source region or the drain region corresponding to the one of the source electrode or the drain electrode; an intermediate layer on the first electrode and comprising at least an organic emission layer; and a second electrode on the intermediate layer.

Organic light-emitting display apparatus and method of manufacturing the same

An organic light-emitting display and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the organic light-emitting display includes: i) a pixel electrode disposed on a substrate, ii) an opposite electrode disposed opposite to the pixel electrode, iii) an organic emission layer disposed between the pixel electrode and the opposite electrode; a light-scattering portion disposed between the substrate and the organic emission layer, including a plurality of scattering patterns for scattering light emitted from the organic emission layer in insulating layers having different refractive indexes. The display may further include a plurality of light absorption portions disposed between the light-scattering portion and the organic emission layer to correspond to the scattering patterns.

Organic light-emitting display and method of manufacturing the same

An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.

Method of manufacturing organic light emitting diode display

An organic light emitting display device includes an active layer of a transistor disposed on a substrate, a gate electrode disposed on the active layer and on a first insulation layer, a second insulation layer which is disposed on the gate electrode and exposes a source area and a drain area of the active layer, a drain electrode which is disposed on the second insulation layer and is connected to an exposed area of the drain area, a third insulation layer on the drain electrode, and a cathode electrode on the third insulation layer, where the cathode electrode penetrates the first insulation layer, the second insulation layer and the third insulation layer, and the cathode electrode is connected to an exposed area of the source area.

Organic light emitting display device

An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing.

Organic light emitting diode display device and method of fabricating the same

A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer.

Thin film transistor and organic light emitting display device having the same

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Yongin, South Korea

Kyu-Sik Cho