Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Kyu-sang Kim

Kyoung-ho Ha

Su-hee Chae

Youn-joon Sung

Tae-hoon Jang

Seung-Yong Lee

Dong-Uk Choi

Young-Chul Park

Yong-suk Choi

Jae-Yeon Lee

Han-youl Ryu

Joon-Woo Lee

Jong-In Shim

Hong-Je Cho

Kwan-Tack Lim

Jin-Su Kim

Seung-Hwan Chon

Jung-hye Chae

Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

Method of manufacturing semiconductor light emitting device

Example embodiments are directed to a semiconductor laser diode and a method of fabricating the same. The semiconductor laser diode may include a first semiconductor layer formed over a first substrate and capable of emitting light, and a second semiconductor layer capable of guiding the emitted light, wherein the first and second semiconductor layers are bonded to each other. The method of fabricating the semiconductor laser diode may include forming over a first substrate a first semiconductor layer capable of emitting light, forming over a second substrate a second semiconductor layer capable of guiding the light, bonding the first semiconductor layer to the second semiconductor layer, and removing the second substrate. The second semiconductor layer may be grown separately under conditions different from those for forming the first semiconductor layer, and may be subsequently bonded to the first semiconductor layer.

Semiconductor laser diode having wafer-bonded structure and method of fabricating the same

A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.

Semiconductor laser diode having ridge

An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as HPO, HNO, CHCOOH, HClO, HO, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO), potassium bisulfate (KHSO), and potassium sulfate (KSO) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.

Etchant composition for indium oxide layer and etching method using the same

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Seoul, South Korea

Kyu-sang Kim