Samsung Electronics Co., Ltd.

Kyu-man Cha

Hwa-Sung Rhee

Hyun-Jo Kim

Jong-Mil Youn

Jae-yup Chung

Hee-Don Jeong

Je-min Yoo

Jong-shik Yoon

An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.

Integrated circuit device and method of manufacturing the same

Growing community of inventors

Busan, South Korea

Kyu-man Cha