Eugenus, Inc.

Kyu Jin Choi

Niloy Mukherjee

Somilkumar J Rathi

Bunsen B Nie

Hae Young Kim

Sung-Hoon Jung

Nariman Naghibolashrafi

Yoshikazu Okuyama

Hee Seok Kim

Moonsig Joo

The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Smooth titanium nitride layers and methods of forming the same

Growing community of inventors

Seongnam, South Korea

Kyu Jin Choi