Electronics and Telecommunications Research Institute

Kyu Jeong Choi

Byoung Gon Yu

Young Sam Park

Sung Min Yoon

Seung Yun Lee

Nam Yeal Lee

Sang Ouk Ryu

Sangouk Ryu

Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbSephase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbSein the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

Phase-change memory device using Sb-Se metal alloy and method of fabricating the same

A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based GeSbTe(0.12&#x2266;x&#x2266;0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

Phase change memory device and method of fabricating the same

Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.

Phase change memory device having semiconductor laser unit

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Daejeon, South Korea

Kyu Jeong Choi