Samsung Electronics Co., Ltd.

Kyu-Hyung Kim

Hong-Suk Choi

Hyun-Sik Yun

Younwon Park

Chun-Um Kong

Do-Sam Kim

A storage device includes a nonvolatile memory device including memory blocks divided into a first memory area and a second memory area; and a memory controller. In the case of programming specific attribute data, the memory controller determines a memory area in which the specific attribute data will be programmed according to a wear out ratio of the first memory area and a wear out ratio of the second memory area. The wear out ratio is a ratio of the current maximum erase count of memory blocks of a memory area with respect to the allowable maximum erase count of the memory area.

Storage device dynamically allocating program area and program method thereof

A storage device is provided including a flash memory, and a controller programming first bit data and second bit data into the flash memory and not backing up the first bit data when programming the first bit data and the second bit data in the same transaction and backing up the first bit data when programming the first bit data and the second bit data in different transactions, wherein the first bit data is less significant bit data than the second bit data, and each of the transactions is determined using a sync signal transmitted from a host.

Growing community of inventors

Suwon-si, South Korea

Kyu-Hyung Kim