Osong Medical Innovation Foundation, Korea University Research and Business Foundation

Samsung Electronics Co., Ltd.

Kyu Hyun Choi

Seon Wook Kim

Ho Kwon Kim

Jae Yung Jun

Jung Hwan Lee

Tae Sub Jung

Dong-Joo Bae

Young Sun Han

Heyung-Sub Lee

Sang K Hwang

Tae-Yoon Yook

Disclosed are a memory management system and a method thereof. Restricted spare cells are optimally distributed (or allocated) into a physical region and a virtual region in a system for repairing a fault of a memory, thereby increasing a yield of a memory chip.

Memory management system and method thereof

Disclosed are a memory apparatus having a plurality of information storage tables managed by separate virtual regions and a control method thereof. That is, a fault repair is applied in a memory system having a plurality of information storage tables managed by a separate virtual region, so that the entire information storage space is uniformly used for every region to improve a performance of the entire system and maximize efficiency of the information storage space by utilizing the information storage space.

Memory apparatus having plurality of information storage tables managed by separate virtual regions and control method thereof

Provided are a memory apparatus for applying fault repair based on a physical region and a virtual region and a control method thereof. That is, the fault repair is applied based on the physical region and the virtual region which use an information storage table of a virtual basic region using a hash function, thereby improving efficiency of the fault repair.

Memory apparatus for applying fault repair based on physical region and virtual region and control method thereof

A memory cell device having circuitry located between memory cell arrays comprises power and ground lines to the circuitry formed directly above the memory cell arrays. The power and ground lines are parallel and positioned in an adjacent alternating pattern such that a power line is positioned adjacent a ground line, which is positioned adjacent another power line and so on. Signal lines carrying signals to and from the circuitry are also formed directly above memory cell arrays.

Power and signal line bussing method for memory devices

Method for manufacturing polycrystalline silicon having high resistance, having a first step for depositing a polycrystalline silicon layer for a resistor area over a silicon semiconductor substrate; a second step for growing a first thermal oxide layer having a first specified depth over the polycrystalline silicon layer, ion-implanting with the nitrogen thereon, and growing a second thermal oxide layer having a second specified depth on the ion-implanted layer; a third step for forming a resistor pattern of the polycrystalline silicon with a photo etching method; and a fourth step for ion-implanting impurities in order to decrease the resistance of the polycrystalline silicon as contact regions to be used in resistance contacts with a fixed semiconductor region on the substrate.

Growing community of inventors

Seoul, South Korea

Kyu Hyun Choi