Electronics and Telecommunications Research Institute

Kyu Hwan Shim

Jin Yeong Kang

Sang Hoon Kim

Kyoung Ik Cho

Young Joo Song

Mun Cheol Baek

Jae Seung Lee

Jin Ho Lee

Sang Heung Lee

Seung Yun Lee

Sung Woo Choi

Mun Cheol Paek

Jeon Wook Yang

Hae Gwon Lee

Hae Kwon Lee

Ki Soo Nam

Hyeon Cheol Ki

Hong Seung Kim

Young K Choe

Jin Yeoung Kang

Kyong Ik Cho

There is provided a feedback amplifier capable of easily controlling its dynamic range without a separate gain control signal generation circuit. The feedback amplifier includes an input terminal detecting an input voltage from input current, a feedback amplification unit amplifying the input voltage to generate an output signal, and an output terminal outputting a signal amplified by the feedback amplification unit. The feedback amplification unit includes a feedback circuit unit including a feedback resistor located between the input terminal and the output terminal, and a feedback transistor connected in parallel to the feedback resistor; and a bias circuit unit supplying a predetermined bias voltage to the feedback transistor of the feedback circuit unit and merged in the feedback amplification unit.

Automatic gain control feedback amplifier

An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.

Optoelectronic device having dual-structural nano dot and method for manufacturing the same

There is disclosed a method for fabricating a SiGe MODFET device using a metal oxide film. The present invention provides a SiGe MODFET device with improved operation speed and reduced non-linear operation characteristic caused in a single channel structure devices, by increasing the mobility of the carriers in the SiGe MODEFT having a metal-oxide gate, and method of fabricating the same. In order to accomplish the above object, the present invention grows a silicon buffer layer and a SiGe buffer layer on a silicon substrate by low-temperature process, so that defects caused by the mismatch of the lattice constants being applied to the epitaxial layer from the silicon substrate are constrained in the buffer layered formed by the low-temperature process.

SiGe MODFET with a metal-oxide film and method for fabricating the same

Provided with a method of fabricating a 200-250 nm short-wavelength optoelectronic device, which has a combination of an optical device with a plurality of acceleration electrodes and a field emission device with a plurality of acceleration electrodes, from a semiconductor having a 5-6 eV energe band gap, based on a principle that an electron-hole pair is produced using a highly energetic electron which is injected from a field emission device, and short-wavelength photons are emitted when the electron recombines with the hole and confined in a quantum well to emit a light corresponding to the energy level of the quantum well, thereby eliminating the need of using dopants for forming n-p junctions in the semiconductor and achieving high efficiency in terms of energy because highly energetic electrons result in one or more electron-hole pairs.

Short-wavelength optoelectronic device including field emission device

The present invention relates to a semiconductor device and, more particularly, to a short-wavelength optoelectronic device and a method for fabricating the same. The optoelectronic device according to the present invention doesn't have to employ an ion implantation process and an ohmic contact to make the n-p junction in the WB compound semiconductor, providing a sufficient efficiency for display. The method according to the present invention comprises the step of a) forming a SiC:AlN super lattice multilayer by alternately forming a SiC epitaxial film and an AlN epitaxial film on a substrate, wherein the AlN film is formed and the SiC film is formed using a single source gas of 1,3disilabutane in an nitrogen plasma-assisted metalorganic molecular beam epitaxy system; and b) applying a thermal treatment to the SiC:AlN super lattice multilayer, thereby a mixed crystal compound having (SiC).sub.x (AlN).sub.1-x quantum wells obtained by a diffusion of SiC film and AlN.

Method for fabricating optoelectronic device in low-temperature

The present invention has been made in view of the above mentioned problem, and the present invention provides a highly integrated multicolor light emitting device which emits multiple colors in a chip by integrating light emitting devices of different colors, and in accordance with an aspect of the present invention, there is disclosed a light emitting device including: a plurality of light emitting elements formed on a substrate each of which comprises a plurality of semiconductor layers, wherein each of the plurality of light emitting elements radiates a light of different wavelength from one another.

Highly integrated multicolor light emitting device and a method for

An X-ray generation system for an ultra fine lithography includes a center electrode having an adjusting member, peripheral electrode having gas flow holes, a metal disc having gas flow holes for generating the X-ray from a plasma, a large capacitor, a transparent cylinder, a discharge member, Be discharge and observing windows, a cylindrical insulator, exhaust holes, a metal container, large electric power spatial gap switches, a current returning wire, an exhaust pump, and gas feeding members. Thereby, the system provides continuous operation and increased stability, controlling and discharging quantity so that the X-ray system can be easily utilized for researching and commercial applications.

X-ray generation system for an ultra fine lithography and a method

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Daejon-Shi, South Korea

Kyu Hwan Shim