Samsung Electronics Co., Ltd.

Kyu-hwan Chang

Seung-Pil Chung

Young-bum Koh

Heung-soo Park

Young-min Kwon

Jae-inh Song

Sang-lock Hah

Bo-un Yoon

Yong-Sun Ko

Sang-rok Hah

Hyeon-Deok Lee

Sun-Jung Lee

Chang-lyong Song

Hong-kyu Hwang

Kazuyuki Fujihara

Gil-Gwang Lee

Seung-pil Chong

A method of filling a contact hole of a semiconductor device preceded by dry cleaning for removing a damaged layer resulting from dry etching is provided. The method includes selectively exposing an underlying material layer by a dry etch and dry cleaning including passing plasma excited from a source gas over the exposed underlying material layer to remove the damaged layer formed from the dry etch. Subsequently, an electrically conductive layer with which to fill the contact hole is formed. The formation of the electrically conductive layer is performed in a separate chamber connected sequentially to a chamber for performing the dry cleaning to prevent the exposed underlying material layer inside the dry cleaned contact hole from being exposed to a source of contamination.

Method of filling contact hole of semiconductor device

Copper-plating elecrolyte containing polyvinylpyrrolidone and method for forming a copper interconnect

A method of manufacturing a semiconductor device having a hemispherical grain (HSG) layer employs a dry cleaning process. A polysilicon layer is formed on a specific material layer on a semiconductor substrate. Next, a polysilicon pattern, at least a portion of which is exposed, is formed by etching the polysilicon layer. The exposed surface of the polysilicon pattern is then dry cleaned by supplying hydrogen in a plasma state and a fluorine-based gas toward the exposed surface. The exposed surface of the polysilicon pattern may also be wet cleaned before being dry cleaned to wash away pollutants which may have been left thereon. An HSG layer is then formed on the cleaned surface of the polysilicon pattern. After the HSG layer is formed, the surface of the HSG layer may be dry cleaned again by supplying hydrogen in a plasma state and a fluorine-based gas toward the surface of the HSG layer. The surface of the HSG layer may also be further wet cleaned before being dry cleaned. Accordingly, the HSG layer is effectively cleaned without damaging or contaminating the HSG layer, thereby improving the reliability of the semiconductor device.

Method of manufacturing a semiconductor capacitor having a hemispherical grain layer using a dry cleaning process

A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substrate. Cleaning solutions includes ammonium, hydrogen peroxide, deionized water, and chelating agent. The chelating agent includes one to three compounds selected from the group consisting of carboxylic acid compounds, phosphonic acid compounds, and hydroxyl aromatic compounds. The fluorine-containing gas is a gas selected from the group consisting of nitrogen trifluoride (NF3), hexafluorosulphur (SF ), and trifluorochlorine (ClF ).

Method of removing contaminants from integrated circuit substrates using cleaning solutions

To form isolation trenches on a semiconductor substrate, chemical mechanical polishing (CMP) stopping patterns are formed on the substrate, and the substrate is then etched using the CMP stopping patterns as a mask. Then an insulating material is deposited to fill the trenches and cover the CMP stopping patterns. The insulating material is etched using a CMP process until the CMP stopping patterns become exposed, and is then etched using a wet or dry etching process. The wet or dry etching is continued until protruding insulating material above a surface of the substrate is a predetermined thickness, which corresponds to an amount of the insulating material that is etched during removal of the CMP stopping patterns and during intermediate processes prior to formation of a gate oxide layer.

Method of forming trench isolation regions

Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.

Methods for cleaning wafers used in integrated circuit devices

In-situ cleaning apparatuses for wafers used in integrated circuit

A gas supply apparatus, for use in a semiconductor device manufacturing process, provides a showerhead for evenly supplying various kinds of gases to a reaction chamber. The gas supplying apparatus for use in the formation of a thin film of a semiconductor device includes a first porous plate having a plurality of first holes formed throughout its surface, and a central bore formed at its center; and a second porous plate having first projections which are regularly formed throughout its central portion, and second projections which contain depressions continuously formed around the first projections. The gas supplying apparatus evenly distributes gas into the reaction chamber, thereby improving the uniformity of the film thickness to be grown on a substrate.

Showerhead for a gas supplying apparatus

Growing community of inventors

Kyungki-do, South Korea

Kyu-hwan Chang