Samsung Electronics Co., Ltd.

Namlab Ggmbh

Techno Semichem Co., Ltd.

Kyu-Ho Cho

Youn-soo Kim

Sang-Yeol Kang

Han-jin Lim

Jae-Soon Lim

Hyung-suk Jung

Ki-chul Kim

Youn-Joung Cho

Wan-don Kim

Young-Lim Park

Seung-min Ryu

Seung-hwan Lee

Jae-hyoung Choi

Yong-Suk Tak

Jin-il Lee

Jin-Su Lee

Oh-seong Kwon

Jong-Bom Seo

Sun-Min Moon

Eun-Sun Kim

Beom-Seok Kim

Jun-goo Kang

Chang-su Woo

Geun-Kyu Choi

Kyoo-Ho Jung

Hyo-Sik Mun

Jung-Ho Lee

Jin-Yong Kim

Byung-Soo Kim

Young-Geun Park

Kwang-Hee Lee

Uwe Schroeder

Suk-Jin Chung

Seung-Min Ryu

Sang-yeol Kang

Jae-Sun Jung

Ji-Eun Lim

Ki-Young Lim

Seung-Ho Yoo

Deung-Hyeon Ryu

Chang-Hwa Jung

Steve Knebel

An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

Integrated circuit device

A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.

Capacitor structure and semiconductor devices having the same

A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

Semiconductor devices and method of manufacturing the same

An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.

Integrated circuit device having dielectric layer, and method and apparatus for manufacturing the integrated circuit device

Capacitor structure

A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.

Semiconductor devices

A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.

Capacitors including amorphous dielectric layers and methods of forming the same

Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.

Semiconductor device having metal plug and method of forming the same

A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film.

Method of fabricating semiconductor device having dielectric layer with improved electrical characteristics

A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5 eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.

Semiconductor device having glue layer and supporter

In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor

The present invention provides organometallic compounds and methods of forming thin films including using the same. The organometallic compounds include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1):  wherein Rand Rare each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.

Organometallic compounds and methods of forming thin films including the use of the same

Provided are a scheduling method and apparatus for guaranteeing real-time service quality of Wireless Broadband (WiBro) customer premises equipment (CPE). The scheduling apparatus includes: a real-time protocol (RTP) packet monitoring unit for monitoring an RTP packet passing through a local area network (LAN) section and detecting a bandwidth of real-time service; and a queue managing unit for determining a window size corresponding to the bandwidth of real-time service checked by the RTP packet monitoring unit and generating/changing a real-time service queue. The scheduling method and apparatus monitor an RTP packet and adjust a real-time service queue, thereby ensuring real-time service quality of terminals.

Scheduling method and system for guaranteeing real-time service quality of WiBro CPE

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Seoul, South Korea

Kyu-Ho Cho