Samsung Electronics Co., Ltd.

Kyu-chan Lee

Sung-Jin Lim

Sung-Soo Kim

Ho-seop Lee

Sang-hyoun Kim

Jae-moon Lee

Gang-mo Koo

Min-hoon Lee

Hyoung-pyo Lee

Byung-kwan Kim

Sang-man Byun

A display apparatus includes: a display panel including a plurality of pixels; a storage configured to store a plurality of lookup tables respectively corresponding to a plurality of gamma values; and a processor configured to determine a lookup table, from among the plurality of lookup tables, to be applied to each of the plurality of pixels based on a location of each of the plurality of pixels on the display panel, and determine a brightness value of each of the plurality of pixels using the determined lookup table.

Display apparatus and control method thereof

A method for driving a display panel and a display apparatus applying the same are provided. The method includes driving all lines of the display panel in a first scanning section of a section to display one frame, and driving one of an even line and an odd line of the display panel in a second scanning section of the section to display the one frame. Accordingly, a crosstalk phenomenon in the display apparatus is removed and image quality of a 3D stereoscopic image is improved.

Method for driving display panel and display apparatus applying the same

The semiconductor memory device includes a power supply voltage (Vcc) applied to the semiconductor device, a row controller for generating an output signal in response to a control signal representing one of a normal operation state and a stand-by state, and a plurality of row decoders connected between the row controller and a plurality of word lines. Each row decoder activates a corresponding word line in response to the output signal from the row controller and a row address signal from an external source, and the output signal of the row controller is a high voltage or a ground voltage when the plurality of row decoders are in a normal operation state or in a stand-by state, respectively. The semiconductor memory device also includes a column controller for generating an output signal in response to a first control signal representing one of a normal operation state and a stand-by state and a plurality of column decoders connected between the column controller and a plurality of column selection lines. Each column decoder activates a corresponding column selection line in response to the output signal from the column controller, a column address signal, and a second control signal, and the output signal of the column controller is an internal supply voltage or the ground voltage when the plurality of column decoders are in a normal operation state or in a stand-by state, respectively. The semiconductor memory device does not generate leakage current in a stand-by state.

Semiconductor memory device having improved decoders for decoding row and column address signals

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Yongin-si, South Korea

Kyu-chan Lee