Taiwan Semiconductor Manufacturing Comp. Ltd.

Kyriaki Fotopoulou

Georgios Vellianitis

Gilberto Curatola

Nader Akil

An integrated circuit including a Schottky diode, and a method of making the same. The diode includes an active region bordered by an isolation region in a semiconductor substrate of the integrated circuits, a first electrode having a metal contact provided on a surface of the active region, and a second electrode having a silicide contact also provided on the surface of the active region.

Integrated circuit

A method of manufacturing Schottky diodes in a CMOS process includes forming wells, including first wells () for forming CMOS devices and second wells () for forming Schottky devices. Then, transistors are formed in the first wells, the second wells protected with a protection layer () and suicide contacts () formed to source and drain regions in the first wells. The protection layer is then removed, a Schottky material deposited and etched away except in a contact region in each second well to form a Schottky contact between the Schottky material () and each second well ().

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Redhill, United Kingdom

Kyriaki Fotopoulou