Mitsubishi Electric Corporation

Kyozo Kanamoto

Katsuomi Shiozawa

Hitoshi Sakuma

Kazushige Kawasaki

Toshiyuki Oishi

Yasunori Tokuda

Yoichiro Tarui

Yuji Abe

Hiroshi Kurokawa

Kenichi Ohtsuka

Shinji Abe

Hidetada Tokioka

Junichi Horie

Kyosuke Kuramoto

Mikio Yamamuka

Toshihiko Shiga

Yosuke Suzuki

Yoshiyuki Suehiro

Hiroyuki Fuchigami

Hirofumi Konishi

Tatsuo Omori

A photoelectric converter in which an intermediate layer is provided between a first photoelectric-conversion-layer including a first p-type-semiconductor-layer and a first n-type-semiconductor-layer and a second photoelectric-conversion-layer including a second p-type-semiconductor-layer and a second n-type-semiconductor-layer. The intermediate layer includes an n-type-transparent conductive-oxide-film in contact with the first n-type-semiconductor-layer and a p-type-transparent-conductive oxide-film in contact with the second p-type-semiconductor-layer respectively having a bandgap equal to or higher than 1.5 electron volts. A width of a low carrier concentration region in a film thickness direction, in which a concentration of a free carrier formed near at least one of an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the n-type-transparent-conductive-oxide-film and an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the second p-type-semiconductor-layer is equal to or lower than 1&#xd7;10cm, is equal to or less than 5 nanometers.

Photoelectric converter and manufacturing method thereof, and photoelectric conversion module

A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga&#x2014;N substrate () over which a semiconductor element is formed, and an n-electrode () as a metal electrode formed over the back surface of the GaN substrate (). A connection layer () is formed between the GaN substrate () and the n-electrode (), and the connection layer () is composed of a material that is other than nitride semiconductors and that contains silicon.

Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof

A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400&#xb0; C. and 600&#xb0; C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.

Method for manufacturing nitride semiconductor light-emitting element

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.

Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.

Nitride semiconductor device

A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.

Nitride semiconductor device and manufacturing method of the same

A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate () over which a semiconductor element is formed, and an n-electrode () as a metal electrode formed over the back surface of the GaN substrate (). A connection layer () is formed between the GaN substrate () and the n-electrode (), and the connection layer () is composed of a material that is other than nitride semiconductors and that contains silicon.

Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereof

A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O, O, NO, NO, or NOis supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700&#xb0; C. in an atmosphere containing a nitrogen-containing gas such as Nor NHor an inert gas such as Ar or He.

Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact

A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.

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Tokyo, Japan

Kyozo Kanamoto