Showa Denko K.k.

Toyoda Gosei Co., Ltd.

Kyousuke Masuya

Ryouichi Takeuchi

Takehiko Okabe

The disclosed semiconductor light-emitting element is configured from layering an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (); and a first electrode (), which is the cathode, is formed on the p-type semiconductor layer (). Also, between the p-type semiconductor layer () and a reflecting layer (), the first electrode () is provided with a crystalline first transparent electrode layer () and a non-crystalline second transparent electrode layer (). The crystalline first transparent electrode layer () increases adhesion with the p-type semiconductor layer (), and the non-crystalline second transparent electrode layer () suppresses delamination of the reflecting layer (). Also, the first transparent electrode layer () and the second transparent electrode layer () transmit light emitted from the light-emitting layer and suppress degradation of reflective characteristics. In this way, delamination of the reflecting layer and degradation of reflective characteristics are suppressed in a semiconductor light-emitting element mounted using flip-chip (FC) mounting.

Semiconductor light-emitting element, semiconductor light-emitting device, method for producing semiconductor light-emitting element, method for producing semiconductor light-emitting device, illumination device using semiconductor light-emitting device, and electronic apparatus

A light-emitting diode () has a main light-extracting surface and includes a compound semiconductor layer () including semiconductor layers (to), a light-emitting part () contained in the compound semiconductor layer, a light-emitting layer () contained in the light-emitting part, a transparent substrate () joined to the compound semiconductor layer, and first and second electrodes () of opposite polarities formed on the main light-extracting surface on the side opposite the transparent substrate. The second electrode is formed at a position on the portion of the compound semiconductor layer exposed by removing the semiconductor layers (to) and has the periphery thereof enclosed with the semiconductor layers. The main light-extracting surface has an external shape having the largest width of 0.8 mm or more.

Light-emitting diode

A light emitting diode includes a substrate, a compound semiconductor layer including a light emitting layer formed on the substrate, a first electrode formed on an upper surface of the compound semiconductor layer, and a second electrode formed on the substrate or a semiconductor layer which is exposed by removing at least a portion of the compound semiconductor layer. The first electrode includes a wiring electrode provided on the compound semiconductor layer in contact therewith, an ohmic electrode provided on the compound semiconductor layer in contact therewith, a translucent electrode formed over the compound semiconductor layer to cover the wiring electrode and the ohmic electrode, and a bonding pad electrode connected to the wiring electrode, at least a portion of the bonding pad electrode being exposed from an opening of the translucent electrode to the exterior.

Growing community of inventors

Ichihara, Japan

Kyousuke Masuya