Samsung Electronics Co., Ltd.

Sungkyunkwan University

Kyoungtae Kang

Byunghoon Jeong

Chiweon Yoon

Jangwoo Lee

Jeongdon Ihm

Taesung Lee

Junha Lee

Jungjune Park

Kang Yoon Lee

Dongho Shin

Sanglok Kim

Hyunsuk Kang

Eunjin Song

A data transfer circuit in a nonvolatile memory device includes first repeaters, second repeaters and signal lines. The signal lines connect the first repeaters and the second repeaters, and include a first group of signal lines and a second group of signal lines alternatingly arranged. The first repeaters include a first group of repeaters activated in a first operation mode and a second group of repeaters activated in a second operation mode. The second repeaters include a third group of repeaters activated in the first operation mode and are connected to the first group of repeaters through the first group of signal lines floated in the second operation mode, and a fourth group of repeaters activated in the second operation mode and are connected to the second group of repeaters through the second group of signal lines floated in the first operation mode.

Data transfer circuits in nonvolatile memory devices and nonvolatile memory devices including the same

An apparatus and method for ZQ calibration, including determining a strong driver circuit and a weak driver circuit, which are related to an input/output (I/O) circuit connected to a signal pin, at power-up of the I/O circuit; providing a ZQ calibration code related to a sweep code to one from among the strong driver circuit and the weak driver circuit according to ZQ calibration conditions; and providing a ZQ calibration code related to a fixed code to an unselected circuit, thereby adjusting a termination resistance of the signal pin.

Apparatuses and methods for ZQ calibration

A high resolution impedance adjustment (ZQ) calibration method using a hidden least significant bit (HLSB) is provided. The high resolution ZQ calibration method generates a data input/output (DQ) code of n+1 bits without a calibration time increase by adding the hidden least significant bit (HLSB) to a ZQ code of n bits output in a ZQ calibration operation of an impedance adjustment (ZQ) pad. A change in a termination resistance of the DQ pad is reduced as small as possible by the DQ code of n+1 bits.

High resolution ZQ calibration method using hidden least significant bit (HLSB)

A duty cycle corrector includes a delay chain, an edge detector, a falling edge shift (FES) controller, a plurality of falling edge modulator (FEM) cores, and a phase interpolator. The delay chain delays a first clock to generate a delay clock, and generates first and second sampling control signals. The edge detector samples the first clock and a second clock using the first and second sampling control signals to obtain first and second sampling signals. The FES controller determines a modulation direction and a modulation width based on the first and second sampling signals. The plurality of FEM cores first modulate the first edge of the first clock and second modulate the first edge of the delay clock using the modulation direction and the modulation width. The phase interpolator performs phase interpolation on the results of the first and second modulations.

Duty cycle correctors and methods of operating the same

A strobe signal shaping method for a data storage system includes receiving a strobe signal; boosting a first clock edge portion of the strobe signal when the strobe signal is received after having been idle or paused over a predetermined time period; and returning to an operating mode in which boosting is turned off with respect to a second clock edge portion of the strobe signal.

Method of shaping a strobe signal, a data storage system and strobe signal shaping device

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Seoul, South Korea

Kyoungtae Kang