Lg Electronics Inc.

Jingao Solar Co., Ltd.

Kyoungsoo Lee

Sangwook Park

Manhyo Ha

Seongeun Lee

Jonghwan Kim

Jinhyung Lee

Daehee Jang

Minho Choi

Juwan Kang

Gyeayoung Kwag

Jiweon Jeong

Myungjun Shin

Hyunho Lee

Changseo Park

Ilhyoung Jung

Sunghyun Hwang

Goohwan Shim

Giwon Lee

A method for manufacturing a solar cell includes: forming a first photoelectric conversion part including a photoelectric conversion layer including a perovskite compound, a first transport layer, and a second transport layer; and forming a first electrode electrically connected to the first photoelectric conversion part and forming a second electrode electrically connected to the first photoelectric conversion part. The formation of the first photoelectric conversion part includes: forming a first film using a first material constituting the perovskite compound; spraying a second material constituting the perovskite compound on the first film to form a second film; performing a first heat treatment to diffuse the first film and the second film to form the perovskite compound; and performing washing to remove the residual second film residual on the perovskite compound.

Solar cell and method for manufacturing the same

A method of manufacturing a solar cell is disclosed. The method of manufacturing the solar cell includes depositing an intrinsic amorphous silicon layer on a surface of a semiconductor substrate, depositing an amorphous silicon layer containing impurities on the intrinsic amorphous silicon layer to form a conductive region, and forming an electrode electrically connected to the conductive region. The depositing of the intrinsic amorphous silicon layer includes depositing the intrinsic amorphous silicon on the surface of the semiconductor substrate at a deposition rate of 0.5 nm/sec to 2.0 nm/sec.

Method of manufacturing solar cell

A solar cell includes a substrate having a textured surface, the textured surface including a plurality of jagged portions; an emitter region forming a p-n junction with the substrate; a plurality of first electrodes connected to the emitter region; and a second electrode connected to the substrate, wherein each of the plurality of jagged portions has a diameter and a height that are equal to or less than 1 &#x3bc;m, and each of the plurality of first electrodes has a width of about 20 &#x3bc;m to about 80 &#x3bc;m.

Solar cell

A method of manufacturing a solar cell includes forming a photoelectric converter including an amorphous semiconductor layer, forming an electrode connected to the photoelectric converter, and performing a post-treatment by providing light to the photoelectric converter and the electrode, wherein, in the performing of the post-treatment, a plasma lighting system (PLS) is used as a light source, and a processing temperature is within a range from about 100&#xb0; C. to about 300&#xb0; C.

Disclosed herein are a solar cell and a method of manufacturing the same. The solar cell module includes a semiconductor substrate, a first passivation film located on a front surface of the semiconductor substrate, a second passivation film located on a rear surface of the semiconductor substrate, a front electric field region located on the first passivation film on the front surface of the semiconductor substrate and being of a same conductivity-type as that of the semiconductor substrate, an emitter region located on the second passivation film on the rear surface of the semiconductor substrate and being of a conductivity-type opposite that of the semiconductor substrate, first electrodes conductively connected to the front electric field region, and second electrode conductively connected to the emitter region.

Solar cell and method of manufacturing

A post-processing apparatus of a solar cell carries out a post-processing operation including a main period for heat-treating a solar cell including a semiconductor substrate while providing light to the solar cell. The post-processing apparatus includes a main section to carry out the main period. The main section includes a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate. The first heat source unit and the light source unit are positioned in the main section. The light source unit includes a light source constituted by a plasma lighting system (PLS).

Post-processing apparatus of solar cell

Disclosed is a manufacturing method of a solar cell, including forming a photoelectric converter including an amorphous semiconductor layer, forming an electrode connected to the photoelectric converter, and performing a post-treatment by providing light to the photoelectric converter and the electrode.

A method for manufacturing a solar cell includes forming a first dielectric layer on a second surface opposite a first surface of a substrate; forming second dielectric layers respectively on an emitter region and the first dielectric layer; forming a third dielectric layer on the second dielectric layer that is positioned on the emitter region; forming a hydrogenated silicon oxide layer on the third dielectric layer; forming a first electrode on the emitter region and connected to the emitter region; and forming a second electrode on the second surface of the substrate and connected to the substrate, wherein the first surface of the substrate has first and second textured surfaces, and wherein the first textured surface includes a plurality of first protrusions and a plurality of first depressions and the second textured surface includes a plurality of second protrusions and a plurality of second depressions.

A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100&#xb0; C. to about 800&#xb0; C., and the temperature and light intensity of the main processing process satisfy Equation of 1750&#x2212;31.8&#xb7;T+(0.16)&#xb7;T&#x2266;I. Here, T is the temperate (&#xb0; C.) of the main processing process, and I is the light intensity (mW/cm) of the main processing process.

Method for manufacturing solar cell

A method for manufacturing asolar cell includes texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method, forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate, forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate.

A method for manufacturing a solar cell according to an embodiment of the present invention includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.

Method for manufacturing a solar cell

A method for manufacturing a solar cell includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.

Solar cell and method for manufacturing with pre-amorphization implant to form emitter

A solar cell is discussed. The solar cell includes a semiconductor substrate, a p-type conductive region formed at the semiconductor substrate and including a p-type impurity, and a passivation film formed on the p-type conductive region and including aluminum oxide. The passivation film has a thickness of 7 to 17 &#x212b;.

Solar cell and method of manufacturing the same

A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate formed of an n-type crystalline semiconductor, an emitter region of a p-type positioned at a first surface of the substrate, a first dielectric layer positioned on a second surface opposite the first surface of the substrate, second dielectric layers respectively positioned on the emitter region and the first dielectric layer, a third dielectric layer positioned on the second dielectric layer that is positioned on the emitter region, a first electrode which is positioned on the first surface of the substrate and is connected to the emitter region, and a second electrode which is positioned on the second surface of the substrate and is connected to the substrate.

Growing community of inventors

Seoul, South Korea

Kyoungsoo Lee