Samsung Electronics Co., Ltd.

Kyoungsil Park

DoYoung Kim

Yoonmi Lee

JungDae Park

Dusik Bae

Hyeogki Kim

Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.

Methods of fabricating semiconductor devices with flattened hardmask layers

Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.

Growing community of inventors

Seongnam-si, South Korea

Kyoungsil Park