Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Kyoungseon Kim

Shiyong Yi

Hyunwoo Kim

Su Jin Kim

Su-Min Park

Sang Ouk Kim

Hyojin Yun

Seokhwan Oh

Eunsung Kim

Dong Ki Yoon

So-Ra Han

Seongwoon Choi

Min Ju Park

Chulho Shin

Jaewoo Nam

Haisub Na

Seung Hak Park

Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Method of forming fine patterns in an anti-reflection layer for use as a patterning hard mask

A photolithography method includes coating a photoresist on an active region and an edge region of a wafer, exposing the photoresist on the edge region to first ultraviolet rays, exposing the photoresist on the active region to second ultraviolet rays, depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region, and developing the photoresist on the active region using a second developing solution.

Photolithography method including dual development process

Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first pattern, a second pattern and a third pattern are formed by phase separating the block copolymer. At least one of the first, second and third patterns may be removed to form a preliminary pattern. An etching process may be performed using the preliminary pattern as an etching mask. The first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern.

Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern

Growing community of inventors

Suwon-si, South Korea

Kyoungseon Kim